IXFH9N80Q

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IXFH9N80Q is a field-effect transistor that is specifically designed for design engineers and makers. It a new-generation, low noise, N-channel enhancements mode MOSFET that is commonly used to switch high-current loads in modern, high-performance electronic devices. It is ideal for use in a variety of applications, including signal processing, switch mode power supplies, and more.

The IXFH9N80Q’s main components include a drain and source, gate, body, and substrate. The drain, whose main purpose is to provide an exit for the current, is connected to the source. The gate is connected to the body and is the control element of the electrical signal. The body of the IXFH9N80Q is connected to the substrate, which is the base or foundation for the MOSFET and is used to facilitate the maximum flow of current.

The source voltage, drain voltage, and gate voltage of the IXFH9N80Q are all used in conjunction to achieve its maximum performance. In the case of a zero source voltage, the IXFH9N80Q does not create any channel between the drain and the source, preventing any current or voltage from flowing between the two. The gate voltage is then used to create the channel, allowing current and voltage to flow from the source to the drain. This channel can be further adjusted by varying the gate voltage. Generally, the higher the gate voltage, the larger the drain-to-source voltage.

The main advantage of the IXFH9N80Q is its low on-state resistance, or RDS(on). This low RDS(on) allows for minimal power dissipation and excellent thermal performance, which is essential for higher power applications. This makes it suitable for use in automotive, industrial, communications, and home entertainment applications.

The IXFH9N80Q also features a low input capacitance and minimal gate charge, making it ideal for high-speed, high-frequency switching circuits. Furthermore, its low input/output capacitance helps reduce the MOSFET’s susceptibility to noise. And lastly, its low thermal design enables it to remain stable even at high currents.

The IXFH9N80Q is a great device for those who are looking for a reliable, high-performance field-effect transistor for their applications. Its low on-state resistance, low input/output capacitance, minimal gate charge, and low thermal design make it ideal for high-current applications. It is a reliable, low-noise MOSFET that is suitable for a variety of applications and is a great choice for design engineers and makers who require a high-performance, high-performance transistor.

The specific data is subject to PDF, and the above content is for reference