Allicdata Part #: | IXFN100N20-ND |
Manufacturer Part#: |
IXFN100N20 |
Price: | $ 15.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 200V 100A SOT-227B |
More Detail: | N-Channel 200V 100A (Tc) 520W (Tc) Chassis Mount S... |
DataSheet: | IXFN100N20 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 13.98600 |
Vgs(th) (Max) @ Id: | 4V @ 8mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227B |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 520W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 380nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFN100N20 is a power Metal-Oxide Semiconductor Field-effect transistor (MOSFET). With a VDS of 100V and an RDS(ON) of max 2.0mΩ, the IXFN100N20 is an efficient and robust solution for high-current applications. Its small size and low on-resistance makes it well-suited for space-limited environments.
MOSFETs are one of the most important types of transistors for analog, digital, and high-power applications. In fact, almost all of our current digital and analog electronics use MOSFETs as their active device. As such, understanding the working principle of MOSFETs and the features and limitations of different types of MOSFETs is essential for both designers and engineers.
MOSFETs are voltage-controlled devices and are typically used in power switching circuits. They are operated by the application of a voltage which controls the conduction of a current in an external circuit. The external circuit must be designed to have a low impedance, so as to avoid the issue of impedance related losses. MOSFETs have three terminals, namely the source, gate, and drain. The source is usually connected to ground or a large voltage source and is often labeled GND. The gate is the control terminal and is connected to the input signal. The drain is, as the name implies, the output. MOSFETs can be either N-channel (NFET) or P-channel (PFET). Within each type of MOSFET, there is a wide range of device types and sizes.
The IXFN100N20 is a N-channel enhancement mode MOSFET and is specifically designed for higher power applications such as power supply and motor speed control. It features a low creepage distance and low gate charge, which makes it suitable for high-frequency switching applications. Furthermore, it has a lower on-resistance than many comparable devices, making it a cost-effective solution for power supply and motor control.
The IXFN100N20 works by operating the gate voltage. As the voltage on the gate increases, the source-to-drain channel allows more current to flow through it. This is known as enhancement mode. As the gate voltage is reduced, the current flow is reduced but not completely blocked. This is known as depletion mode. By controlling the voltage on the gate, the maximum current can be limited, thereby reducing power dissipation.
In addition to its low on-resistance, the IXFN100N20 also has a low gate charge which benefits applications that need the fastest switching speed and high-frequency operation. With a small package, the IXFN100N20 can be easily incorporated in a power supply design without sacrificing voltage or current ratings. It also allows for size reduction in motor control applications, making it ideal for space-constrained designs.
The IXFN100N20 is a powerful and efficient solution for high-current applications. Through its low on-resistance, small size, and low gate charge, this MOSFET can offer a cost-effective and efficient way to switch power in a wide range of applications. It is well-suited for both power supply and motor control applications, allowing designers to take advantage of its features while reducing the size and cost of the power supply design.
The specific data is subject to PDF, and the above content is for reference
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