IXFN210N20P

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXFN210N20P is a N-Channel Enhancement mode field effect transistor (FET) ideally suited for high speed switching applications requiring low gate drive in industrial, consumer, and automotive applications. The IXFN210N20P is manufactured using Advance CMOS-technology for extended performance and full compatibility with all popular logic families. The device has been designed to minimize on-state resistance while providing superior switching performance, extremely fast switching and level shifting capability over any other logic family.

IXFN210N20P Application Field

The IXFN210N20P is ideal for use in high speed switching applications requiring low gate drive in industrial, consumer, and automotive applications. The device\'s high frequency performance and fast switching speed make it suitable for level shifting applications, such as clock switching, control electronics, and data communications. The IXFN210N20P is also well suited for a variety of automotive applications such as airbag control systems, memory modules, and safety systems.

IXFN210N20P Working Principle

The IXFN210N20P works on the principle of enhancement-mode field effect transistors (FETs). An N-Channel FET, like the IXFN210N20P, consists of a source, a drain, and a gate. The source and drain are both connected to the highest voltage of the circuit and the gate is connected to a lower voltage. When a positive voltage is applied to the gate, it allows the flow of electrons from source to drain, thus completing the circuit.

The IXFN210N20P features low input capacitance and low output resistance, which allow for low power and minimal heat dissipation. Additionally, the device features an extremely fast switching speed. This makes it suitable for applications which require high speeds, such as level shifting, control electronics, and data communications.

The IXFN210N20P is a reliable device and is resistant to electrostatic discharge, making it an excellent choice for applications that require consistent performance in a variety of environmental conditions. The device is available in surface-mount, through-hole and nose-cone packages which allow for easy installation and mounting in a variety of locations.

The specific data is subject to PDF, and the above content is for reference