IXFN100N25

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The IXFN100N25 is a depletion-mode, field-effect transistor (FET) that is part of the N series from IXYS Corporation. This N-type MOSFET (metal-oxide semiconductor FET) is a versatile, economical choice for applications in the automotive, industrial, and medical industries. It has a low on-resistance and is designed for low gate-charge operation.

The IXFN100N25 incorporates an isolated-gate FET structure and is designed to handle high current densities and high power levels at switching frequencies of up to 100 kHz. It offers high-voltage blocking capabilities in an extremely small 4-pin packages, such as an SOT-223 package or a Surface Mount (SMT) or Through-Hole mount.

The IXFN100N25 is an enhancement mode (E-mode) metal oxide semiconductor FET, so its power is normally on, meaning that the drain and source are connected when no voltage is applied to the gate terminal. This device is ideal for switching purposes as it has low on-resistance, a low gate-charge, and high current levels can be handled by the device. This FET type is very efficient as it operates with very low gate-drive requirements.

When used in a circuit, the IXFN100N25 MOSFET acts as a switch, with the gate voltage controlling the drain current. It allows for the efficient and economical regulation of high-current signals and is capable of switching large loads quickly and accurately. The IXFN100N25 is also used to regulate the amount of power to devices that are sensitive to current or voltage levels.

The IXFN100N25 is also used in power supplies, DC-DC converters, inverters, motor control circuits, and other applications requiring high-power switching. It can be used as both a switch and as a phase shift control device in power circuits. It is commonly used in the electrostatic discharge (ESD) protection circuit of electronic components, such as memory cards, hard drives, and processors.

The IXFN100N25 is also a low-impedance FET which helps to minimize noise and other interference that is caused by high-frequency spikes. This FET features a low input capacitance, making it well-suited for AC power switches, charge pumps, and other power conversion applications, where a fast response time is desired. Additionally, due to its low-leakage characteristics, it is suitable for use in logic circuits, such as cascode circuits and analog-to-digital (A/D) converters.

The IXFN100N25 comes in a variety of package sizes, ranging from standard packages such as the SOT-223, to surface mount devices. A variety of voltage ratings are available as well, which makes this FET versatile and economical. It is an excellent choice for applications in the automotive, industrial, and medical industries.

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