IXFN82N60Q3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXFN82N60Q3 is a monolithic high-side switch designed for automotive applications operating between 8 and 60 V. It consists of integrated N and P MOS transistors in a single ChipFET package. Due to its long electrical and thermal conductivity, it is ideal for load switching and DC motor control applications including high-current USB ports, switch-mode power supplies, isolated power converters, and automotive advanced driver assistance systems (ADAS). The IXFN82N60Q3 has an integrated Reverse Body Diode (RBD) to protect against inductive loads. Its low on-state resistance works to minimise power losses due to power conversion, allowing for an efficiency of up to 99%.

The IXFN82N60Q3 is a field effect transistor (FET) designed for low voltage and high current applications, making it ideal for use in automotive applications. It is also suitable for applications in power management, where it can be used to switch current and manage the distribution of power.

The IXFN82N60Q3 works on the principle of the metal-oxide-semiconductor field-effect transistor (MOSFET). It is a single-transistor device consisting of three major components: a metal source, a semiconductor gate, and a metal drain. The metal source and drain are connected to the load, while the gate is connected to the control circuit. A voltage is applied to the gate to either turn the MOSFET on or off.

When the gate voltage is low, the MOSFET is in the off state and no current will flow through it. However, when the gate voltage is high, the metal oxide semiconductor layers form a conducting channel between the metal source and metal drain. This allows current to flow through the FET, making it suitable for use as a switch.

The IXFN82N60Q3 is designed for use as a high-side switch in applications operating between 8 and 60 V. It is highly efficient and able to handle loads of up to 8 A. Its low on-state resistance minimises power losses during power conversion, allowing for an efficiency of up to 99%. Its integrated reverse body diode (RBD) also protects against inductive loads.

The IXFN82N60Q3 is a reliable and efficient switch ideal for use in automotive applications. It is suitable for use in load switching, DC motor control and other power management applications. Its low on-state resistance and integrated reverse body diode (RBD) ensure high efficiency and reliability, making it a versatile and reliable switch.

The specific data is subject to PDF, and the above content is for reference