IXFN300N20X3

Gate Charge (Qg) (Max) @ Vgs:	375nC @ 10V
Package / Case:	SOT-227-4, miniBLOC
Supplier Device Package:	SOT-227B
Mounting Type:	Chassis Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	695W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	23800pF @ 25V
Vgs (Max):	±20V
Series:	HiPerFET™
Vgs(th) (Max) @ Id:	4.5V @ 8mA
Rds On (Max) @ Id, Vgs:	3.5 mOhm @ 150A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	300A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active

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IXFN300N20X3 is one of many transistors functioning as field-effect transistors (FETs). FETs are a type of transistor composed of semiconductor material that helps in amplifying, switching, or controlling electronic signals or currents. It works by involving three terminals in its operation, where the voltage between gate and source can control the current from drain to source. The IXFN300N20X3 is a single junction field-effect transistor of 30V and 20A type, meaning it can supply a 30V peak drain source voltage and 20A drain current, as specified by its name. Because of these properties, it is used in a variety of industrial applications, including automobile, robotics, industrial control equipment, and telecommunication, especially for switching and power amplification purposes. The IXFN300N20X3 is a MOSFET, which stands for Metal Oxide Semiconductor Field-Effect Transistor. It is comprised of two sections of silicon laminates placed on top of a dielectric isolation layer and gate oxide. As electrons pass through the gate, they act as a control switch, which enables the IXFN300N20X3 to turn on and off. The working principle of the IXFN300N20X3 is fairly simple. When the control voltage is applied to the gate, it attracts the majority of channel electrons, and forms a conductive channel from drain to the source. This channel will allow current to pass when the switch is closed, allowing for high frequency and power operation. However, if the control voltage applied to the gate is removed, the majority charge carriers will drift away and the current flow will be completely blocked. The IXFN300N20X3 has several benefits due to its low on-state resistance. This low on-state resistance allows it to handle higher currents more efficiently and with much less energy loss. Additionally, the switching loss is also minimized, since it has very low capacitance between the drain and source. In conclusion, the IXFN300N20X3 is a MOSFET type field-effect transistor that is capable of controlling and amplifying electronic signals or currents and providing high frequency, power operation with low on-state resistance and switching loss. Its many features make it an ideal choice for a variety of industrial applications and it has the capability to handle higher currents with much less energy loss.

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