IXFN32N100P

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IXFN32N100P is a single N-channel MOSFET featuring extremely low gate charge and fast switching performance. This high power and ultra-efficient device is designed primarily for high-current, high-efficiency low-voltage applications such as inverter, motor, and other power switching systems.

The IXFN32N100P features an extremely low on resistance of only 5.3 Ohm and a maximum drain current of 35A, making it an ideal choice for applications that require a high level of efficiency and power. The device also features a maximum drain-source breakdown voltage of 100V, meaning it is suitable for applications operated at higher voltages. In terms of switching performance, the device features a maximum drain propagation delay time of 6.0ns.

IXFN32N100P Application Field

The IXFN32N100P is ideally suited for a variety of power switching applications such as motor control, power supply, and renewable energy systems. It is also suitable for use in charging and discharging power supply applications. For motor control applications, the device is able to handle high current and high efficiency operation. And, due to its fast switching performance and low gate charge, it is suitable for use in high-frequency switching applications such as the control of high-frequency power supplies and DC-to-DC converters. With its ultra-low on resistance, low gate charge and fast switching performance, it is also suitable for use in renewable energy systems, especially those that require a high level of efficiency and power.

IXFN32N100P Working Principle

The IXFN32N100P features a single N-channel Metal-Oxide-Semiconductor (MOSFET) configuration that is designed to provide high power and ultra-efficient operation. The device’s N-channel MOSFET structure consists of a P-type substrate, an insulating layer, and a pair of N-type layers. The N-type layers are connected by a plantary oxide layer, and this creates an insulated gate called the “gate oxide”. When a voltage is applied to the gate oxide, electrons from the N-type layers are repelled from the gate oxide and move through the epitaxial layer, increasing the current between the drain and source.

The device also features a unique design which helps to keep it cool during operation. This includes a low-voltage ESD protection circuit and a built-in Luka spreader layer that dissipates heat away from the device’s body. The device’s package also features an internal heat spreader which helps to dissipate heat away from the device’s body.

In terms of operation, the IXFN32N100P is designed to provide fast switching performance and ultra-low on resistance. The device’s ultra-low on resistance allows it to handle high current with minimised power loss, while the fast switching performance reduces switching losses and improves system efficiency. Furthermore, the device features a low gate charge, which enables it to be switched rapidly and with minimal power consumption. Finally, its high-current, high-efficiency operation makes it an ideal choice for power switching applications.

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