IXFN180N15P

Vgs(th) (Max) @ Id:	5V @ 4mA
Package / Case:	SOT-227-4, miniBLOC
Supplier Device Package:	SOT-227B
Mounting Type:	Chassis Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	680W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7000pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	240nC @ 10V
Series:	PolarHT™
Rds On (Max) @ Id, Vgs:	11 mOhm @ 90A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	150A (Tc)
Drain to Source Voltage (Vdss):	150V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

IXFN180N15P (IXFN180N15P) is one of the most popular field-effect transistors (FETs) available in the market. It is a single enhancement-mode high-voltage N-channel MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) and is widely used in power management, audio power amplifiers, motor control, and many other electronic applications. This article will discuss the IXFN180N15P application fields, its working principle, advantages, and potential applications.

IXFN180N15P Application Field and Working Principle

The IXFN180N15P employs an enhancement-mode operation, which gives it the ability to control the flow of electrical current between the source and drain terminals. It has a high on-resistance, low off-state drain-source leakage current, and excellent on/off ratio, making it ideal for power management applications. Its maximum threshold voltage of 15V makes it suitable for versatile high-voltage applications and its high on-state current rating of 12A can handle high power-load switching.The IXFN180N15P works on the concept of source-follower operation and is composed of two sections: the gate and the source. When a positive voltage is applied to the gate, electrons in the drain move toward the gate and fill the gap left behind by the positive charge. This creates a conductive channel between source and drain, allowing electric current to flow between them. When the positive voltage is removed, the electrons return to the drain, creating a non-conductive channel that prevents current from flowing. Thus, the MOSFET switches current flow according to the voltage applied to the gate.

Advantages

The IXFN180N15P is a low cost, easy to use and reliable device. It has a low drain-source on-resistance, which reduces its power dissipation, and its temperature can be kept low due to its low thermal resistance. It has a higher switching speed than traditional transistors, as well as excellent gate protection against electrostatic discharges. The IXFN180N15P also meets the requirements of various industrial and automotive applications, making it an ideal solution for various power management applications.

Potential Applications

The IXFN180N15P can be used in a wide range of industrial and automotive applications. Due to its high voltage and robust gate protection, it is well suited for high power-load switching applications. It can also be used in motor control applications, power supplies, audio power amplifiers, lighting control, and many other electronic applications.

Conclusion

The IXFN180N15P field-effect transistor is a single enhancement-mode high-voltage N-channel MOSFET. It is an excellent choice for power management applications due to its low on-resistance, low day source leakage current and high on/off ratio. Additionally, its high voltage and robust gate protection make it suitable for various industrial and automotive applications. The IXFN180N15P is a reliable and cost-effective solution for power management applications.

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