Allicdata Part #: | IXFN50N50-ND |
Manufacturer Part#: |
IXFN50N50 |
Price: | $ 18.52 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 50A SOT-227B |
More Detail: | N-Channel 500V 50A (Tc) 600W (Tc) Chassis Mount SO... |
DataSheet: | IXFN50N50 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 16.84180 |
Vgs(th) (Max) @ Id: | 4.5V @ 8mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227B |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 600W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 330nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXFN50N50 Application Field and Working Principle
IXFN50N50 is one of the most common single MOSFETs (Metal-Oxide Semiconductor Field-Effect Transistor) used today in a variety of applications. It is suitable for both low- and high-frequency applications, and its construction consists of one n-channel and one p-channel MOSFETs paired in a single package. This device offers high speed switching, low input capacitance and low "on-state" resistance. It also distinguishes itself with its low gate drive requirements and simple design.
There are many different applications in which the IXFN50N50 can be used, including: AC/DC switching, switching power supplies, motor drives, high- and low-voltage applications, and noise distortion. Many of these applications require high switching speed with low capacitance, low on-state resistance, and low gate drive current, which is where this transistor excels. Additionally, its simple design requires less space and can be used in a variety of different circuits.
The IXFN50N50 is a single MOSFET, meaning that it has one n-channel and one p-channel MOSFET constructed in a single package. The MOSFET are connected in a “half bridge” configuration, meaning that each MOSFET is connected in a complementary fashion and is used to transverse the current from its input to its output. As the MOSFET switches between its "on" and "off" states, the current is either blocked or allowed to flow. Thus, a MOSFET may be thought of as an electronic switch.
The IXFN50N50 utilizes an enhancement type MOSFET that operates in a "Depletion" mode. When the transistor is in an "off" state, there will be a reverse-biased junction in its channel, blocking any current through the device. When the gate voltage is increased (positive voltage with respect to the source), the junction becomes less reverse-biased and more current can flow. On the other hand, as the gate voltage is decreased (negative voltage with respect to the source), the junction becomes more reverse-biased and less current will flow. In this way, the gate voltage controls the amount of current that passes through the device.
The IXFN50N50 is capable of switching at high frequencies, with a rated rise time of 10.3 nanoseconds to a rated fall time of 8.3 nanoseconds. Furthermore, this transistor has a low "on-state" resistance (RDSon) of 11 milliohms, making it ideal for applications that require low power losses. The device also features a low input capacitance of 2.1pF, making it suitable for high-frequency switching applications. The IXFN50N50 also has a low threshold voltage of 1.2V and a high drain-source voltage (Vdss) of 50V, allowing it to be used in a variety of different applications.
In conclusion, the IXFN50N50 is a single MOSFET that offers excellent performance in both low- and high-frequency applications. This MOSFET has a low input capacitance and a low RDSon, making it suitable for switching power supplies and AC/DC switching applications. Additionally, it has a low gate drive current requirement, meaning that it can be used in a wide variety of circuits. Finally, it has good switching speed making it suitable for use in high-frequency applications. Due to its excellent performance characteristics, the IXFN50N50 is an excellent choice for a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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