IXFN90N85X

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The IXFN90N85X is a type of field-effect transistor, more specifically classified as a single Metal Oxide Semiconductor Field-Effect Transistor, or MOSFET. It is designed for applications such as switching and power conversion in load leveling, motor control, point-of-load switching, and power factor correction. The IXFN90N85X is designed to operate from -40°C to +125°C, making it suitable for automotive, industrial, and general purpose applications.

A field-effect transistor, or FET, is an electronic device used to control electric current or power. It works by using the flow of current in one conducting channel to control another conducting channel. FETs utilize an electric field to control the current in a semiconductor channel. FETs are considered to be voltage-controlled devices, because their current is determined by the voltage that is applied to the gate.

The IXFN90N85X is a MOSFET, which employs metal-oxide-semiconductor technology. This technology combines metal and semiconductor materials, which creates a thinner and higher-affinity interface between the metal and the semiconductor. This enables the transistor to pass more electric current, resulting in higher power output and more efficient heat dissipation compared to conventional FETs.

The IXFN90N85X is designed for use in a range of applications, such as modem power supplies, switch-mode power supplies, synchronous rectifier control, low-level/load-leveling and power factor correction, motor control, and more. It has a current rating of up to 75A and a minimum Rds(on) of 0.75mΩ. The IXFN90N85X is available in the HDI (High-Density Interconnect) package, which has superior thermal conductivity and saves board space.

The working principle of the IXFN90N85X is quite simple. It is a three-terminal type of transistor, and the gate terminal of the transistor is the one that is used to control the voltage that is applied across the drain-source terminals. When a voltage is applied to the gate, it will generate an electric field, which will cause a minority charge carrier to flow from the drain to the source. Thus, this will result in a control of current that flows in the drain-source terminals.

The IXFN90N85X has a dual architecture, which allows it to have both a high current drive and a low on-resistance, resulting in increased power efficiency and high-power density. It also features a thermally enhanced package, which increases thermal transfer and reduces power losses. The IXFN90N85X is equipped with a fast turn-off time, which helps reduce power losses, and a fast switching time, which reduces switching losses.

To sum up, the IXFN90N85X is a single MOSFET designed for a variety of applications, such as switch-mode power supplies, synchronous rectifier control, low-level/load-leveling and power factor correction, motor control, and more. It is designed for operating temperatures from -40°C to +125°C, and has a current rating of up to 75A, a minimum Rds(on) of 0.75mΩ, and a dual architecture for increased power efficiency and high-power density. It is equipped with a fast turn-off time and a fast switching time, and has a thermally enhanced package to reduce power losses.

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