| Allicdata Part #: | IXFN106N20-ND |
| Manufacturer Part#: |
IXFN106N20 |
| Price: | $ 17.47 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 200V 106A SOT-227B |
| More Detail: | N-Channel 200V 106A (Tc) 521W (Tc) Chassis Mount S... |
| DataSheet: |  IXFN106N20 Datasheet/PDF |
| Quantity: | 140 |
| 1 +: | $ 15.87600 |
| 10 +: | $ 14.68530 |
| 30 +: | $ 13.49460 |
| 100 +: | $ 12.54200 |
| 250 +: | $ 11.51010 |
| 500 +: | $ 10.95440 |
| Vgs(th) (Max) @ Id: | 4V @ 8mA |
| Package / Case: | SOT-227-4, miniBLOC |
| Supplier Device Package: | SOT-227B |
| Mounting Type: | Chassis Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 521W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 9000pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 380nC @ 10V |
| Series: | HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 20 mOhm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 106A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXFN106N20 is a High-Voltage, N-Channel PowerTrench MOSFET ideal for high-side switching applications. This device is available in the TO-220F, TO-220FP and low-profile Exposed Pad packages. The IXFN106N20 offers the highest level of performance and reliability, providing customers with robust solutions for their switching applications.
The IXFN106N20 is an N-channel power MOSFET with a drain source voltage rating of 20V. It features a low on-resistance of 60mohm and is capable of switching up to 25A of continuous current. The IXFN106N20 also features protection against mechanical and electrical overstress for long life and reliability.
The IXFN106N20 is designed for high-side switching applications, such as motor control, RGB LEDs, solar panels, inverters, switching power supplies, audio amplifiers, and voltage regulators. It enables faster switching speeds, greater efficiency, and improved reliability for applications that require high-voltage switching.
The IXFN106N20 operates using a specific type of field-effect-transistor (FET) technology known as a Metal-oxide-semiconductor field effect transistor (MOSFET). In a MOSFET, current flows between source and drain terminals, controlled by a voltage applied to the gate terminal. When the voltage at the gate terminal is high, the current flowing between source and drain is also high, and when the voltage at the gate terminal is low, the current flowing between source and drain is also low. This makes the device ideal for applications where a small voltage needs to be able to control a large current.
The IXFN106N20 is ideal for applications requiring a high-voltage, low-resistance MOSFET with long lifetime and reliability. It provides customers with a reliable, robust solution for their high-voltage switching applications, which can be used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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