IXFN24N90Q

Series:	--
Packaging:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	900V
Current - Continuous Drain (Id) @ 25°C:	24A (Tc)
Rds On (Max) @ Id, Vgs:	--
Vgs(th) (Max) @ Id:	--
FET Feature:	--
Power Dissipation (Max):	500W (Tc)
Operating Temperature:	--
Mounting Type:	Chassis Mount
Supplier Device Package:	SOT-227B
Package / Case:	SOT-227-4, miniBLOC

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Introduction to IXFN24N90QThe IXFN24N90Q is a transistor developed by IXYS, a company specializing in power semiconductors. It is a low-voltage FET (Field Effect Transistor), and is used in a wide variety of electronic devices that require low power but high voltage devices. It has a maximum drain current max of 24 A, and a gate-source voltage max of 900 V. The IXFN24N90Q is capable of operating at temperatures ranging from -55 °C to 175 °C. This makes it suitable for use in high temperature environments. In addition, it features an integrated voltage regulator, which can be used to regulate the operating voltage of the device.Application Field of IXFN24N90QIXFN24N90Q can be applied in a variety of fields, such as automotive, industrial, aerospace, military, and telecommunication systems. It can also be used in various home appliances, such as microwave ovens and refrigerators. Due to its wide operating temperature range, the IXFN24N90Q can be used in applications that require the device to operate at high temperatures.In automotive applications, the IXFN24N90Q can be used in items such as starter motors and ignition systems. It can also be used in motor control systems, such as motor speed and torque control. Additionally, it can be used in power supplies, where it can be used to regulate the voltage in order to reduce power consumption.In industrial applications, the IXFN24N90Q can be used to control power distribution systems and motors, as well as in safety systems, where it can be used to detect overloads and shut off power in the event of an emergency. It can also be used in logic circuits, where it can be used to carry out logical operations. Furthermore, it can be used to automate processes, such as in industrial robots and other machines, where it can be used to control the operation of the device.Working Principle of IXFN24N90QThe IXFN24N90Q is a Field Effect Transistor (FET), which operates on the principle of channel modulation. This is a method of controlling the flow of current in between the source and the drain within the device. When the gate voltage is applied, it creates an electric field between a Schottky barrier and the gate electrode. This electric field modulates the current flow in the semiconductor channel, and thus, the flow of current in the device can be changed by adjusting the voltage applied to the gate.The IXFN24N90Q can be used to control the current flow between the drain and the source by controlling the gate-source voltage. This allows it to be used in power supplies, where it can be used to regulate the voltage in order to reduce power consumption. It can also be used to carry out logical operations, allowing it to control the operation of logic circuits and machines.ConclusionIn conclusion, the IXFN24N90Q is a low-voltage FET developed by IXYS, which can be used in a wide variety of applications. It has a maximum drain current of 24 A, and a gate-source voltage max of 900 V. Additionally, it features an integrated voltage regulator, which can be used to regulate the operating voltage of the device. It is suitable for use in a variety of application fields, such as automotive, industrial, aerospace, military and telecommunications systems. In addition, it operates on the principle of channel modulation, which allows it to be used to control the current flow between the drain and the source by controlling the gate-source voltage. Therefore, the IXFN24N90Q can be used in a variety of applications that require an efficient, low power, high voltage device.

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