IXFN36N60

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The IXFN36N60 is a high performance N-channel, double-diffused MOSFET (DDMOS) developed by IXYS Corporation for use in switch mode power supplies. It is fabricated using IXYS\' proprietary Discrete Polysilicon Triple-Diffused N-Channel MOSFET (DTR-DMOS) technology, which combines the best elements of both the MOSFET and bipolar transistor technology, and allows for the creation of high power devices in smaller package sizes than traditional MOSFETs. As a DDMOS device, the IXFN36N60 offers superior performance compared to standard MOSFETs, with lower on-resistance and superior gate charge.

The IXFN36N60 is well-suited for use in a wide variety of power applications, from consumer electronics to motor control, from motor drives to automotive, and from lighting to industrial control. Its small package size and high power capabilities make it a popular choice for power switching in these applications.

The IXFN36N60 operates on a single 5 V power supply and is capable of switching from -50°C to +175°C. Its total gate charge (Qg) is minimal, making it well-suited for high-frequency switching applications. The IXFN36N60 can handle currents up to 8.5 Amps at 100°C and voltages up to 600 V. It also features lower EMI, lower voltage losses, and superior thermal efficiency.

The IXFN36N60 utilizes an enhancement-mode MOSFET structure, which employs an insulated-gate field-effect transistor (IGFET) technology to control the electric field of the semiconductor device. The IGFET technology consists of an arrangement of two conducting layers, where one is the gate and the other is the drain and the source. The gate is insulated from the layers by a dielectric layer. This arrangement forms a semi-conductor between the gate and the drain/source layers, which controls the current flow between them. When a positive voltage is applied to the gate, it creates an electric field that attracts electrons from the source. This increases the number of electrons present in the channel and allows current to flow from source to drain.

The IXFN36N60 operates in an enhancement mode, meaning that it only switches on when a positive voltage is applied to the gate. This allows it to be used for power switching without the need for external circuitry or gates. Additionally, the IXFN36N60 can be used to control other electrical components, like relays or transistors, through the gate voltage.

In terms of its limitations, the IXFN36N60 faces its biggest challenge when exposed to high temperatures, as its performance decreases beyond 150°C. As such, it is important to consider environmental factors when working with this device. Additionally, the IXFN36N60 has a relatively large junction capacitance, which results in relatively large switching times compared to other devices.

Overall, the IXFN36N60 is an excellent choice for high power applications. Its excellent performance, small package size, and easy to use design make it an ideal choice for a variety of applications. It is an effective solution for power switching, controlling other electrical components, and can be used in both hot and cold temperature environments.

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