IXFR100N25

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The IXFR100N25 MOSFET is a high power transistor designed for power applications. It is made from silicon and offers a wide range of current and voltage ratings.

The IXFR100N25 is an N-channel Enhancement Mode Field Effect Transistor or MOSFET. It is able to switch high currents and is suitable for use in power applications. The IXFR100N25 is built using a metal oxide semiconductor (MOS) structure and incorporates an insulated gate for controlling the high current. It is designed for low on-resistance, so that potential losses are reduced, saving power and making the device more efficient. The device also features a maximum drain source voltage rating of 75V, a drain current rating of 26A and a continuous drain source current of 18A.

The IXFR100N25 is commonly used as a switch in a variety of high current applications such as DC-DC converters, motor drives and power supplies. The device is also ideal for switching high currents in applications such as automotive, industrial and home electronics. The device has an exceptionally low ‘on’ resistance, so that less power is expended compared to other devices with the same current rating and is fast switching. The device also has a ‘floating’ gate design which means that the body effect is reduced as the gate and drain voltages become more negative.

The IXFR100N25 MOSFET is designed to switch high currents and is widely used in applications where greater efficiency and reliability is required. This device is designed for low on-resistance, so that potential losses are minimized, resulting in the device being more efficient. It also features a fast switching time and a stable \'floating\' design which reduces the body effect as the gate voltage and drain voltage become more negative. The IXFR100N25 is able to switch higher current than many other MOSFET devices with the same voltage rating, making it an ideal choice for applications where efficiency and reliability are key.

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