IXFR90N30

Vgs(th) (Max) @ Id:	4.5V @ 4mA
Package / Case:	ISOPLUS247™
Supplier Device Package:	ISOPLUS247™
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	417W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	10000pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	360nC @ 10V
Series:	HiPerFET™
Rds On (Max) @ Id, Vgs:	33 mOhm @ 45A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drain to Source Voltage (Vdss):	300V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXFR90N30 Application Field and Working Principle

The IXFR90N30 is a Part Number for an insulated-gate bipolar transistor (IGBT) found in a variety of applications in the electronics industry. The device is a four-wire transistor that is made up of two main components, namely a power or drive gate, and an under-voltage lockout switch. It is designed to be used in place of bipolar transistors in power electronics devices as it offers better performance and longer life.

General Information

The IXFR90N30 transistor is a power device suitable for use in diverse applications. It houses a bipolar transistor and a drain-gate FET in a fully isolated package. The Structure of the device is somewhat similar to other IGBTs, with the exception of a high voltage insulated gate, a low voltage depletion mode drive and a simple under-voltage lockout (UVLO) circuit. Primarily available in TO-220 as well as TO3 packages, the IXFR90N30 is considered to be a high power device with performance that is superior to standard MOSFETs. It is suitable for many different types of DC, AC, and switched steady-state output applications, where high-performance and reliable operation is required. Some of the applications for the IXFR90N30 include appliance drives, motor drives, lighting, welding, and solar power.

Typical Characteristics of the IXFR90N30

The IXFR90N30 has a great range of characteristics that make it suitable for a wide range of applications. Its collector-emitter voltage (Vce) is 350V with a collector-base voltage (Vcb) of 600V. It can be operated up to 100 kHz with an avalanche energy greater than 900mJ. The device has a maximum collector current of 30 amperes and a maximum collector power dissipation of 350 watts. It has a typical on-state resistance (RDSon) of 0.6 ohms and the typical switching time is 50μs.

Working Principle

The IXFR90N30 transistor device works on the same principle as other transistors. It is a voltage controlled current device that works by controlling the flow of electrons from the collector to the emitter terminal. The flow of electrons is regulated by a gate voltage which can be provided externally. When the gate voltage reaches a certain threshold level, the device is turned on, allowing current to flow from the collector to the emitter. When the gate voltage is reduced below the threshold level, the current flow is ceased. The voltage-controlled transistor is the essential principle upon which the IXFR90N30 works.

Advantages

The IXFR90N30 offers several advantages over traditional power devices. One of the key advantages is its low on-state resistance, which helps reduce losses in electronic systems. Additionally, its lower gate-drive voltage makes it easier to control and stabilise, eliminating many common problems associated with bipolar transistors. The device also features a high Safe Operating Area (SOA) and high temperature tolerance, making it suitable for harsh operating conditions. Compared to competing devices, it offers improved efficiency, higher power density and an increase in switching frequency. Additionally, the device has a higher breakdown voltage and surge current handling capability compared to other devices of its type.

Applications of the IXFR90N30

The IXFR90N30 can be used in various electronic applications including high-performance AC drives, DC-DC converters, switching power supplies, motor control systems, UPS systems, and audio power amplifiers. The device can also be used in a variety of other applications such as welding machines, high-performance audio drivers, solar inverters, lighting control systems, and more. Its high performance, reliability, and wide voltage range make it suitable for many applications.

Conclusion

The IXFR90N30 is a rugged, reliable, and highly efficient IGBT device. It is suitable for a variety of applications in the power electronics industry. Its features and capabilities, as well as its ability to handle high voltages and surge currents, make it a great choice for many types of applications. It is a versatile and powerful device that offers superior performance and long life.

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