IXFR24N100 Allicdata Electronics
Allicdata Part #:

IXFR24N100-ND

Manufacturer Part#:

IXFR24N100

Price: $ 14.13
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1KV 22A ISOPLUS247
More Detail: N-Channel 1000V 22A (Tc) 416W (Tc) Through Hole IS...
DataSheet: IXFR24N100 datasheetIXFR24N100 Datasheet/PDF
Quantity: 1000
30 +: $ 12.84610
Stock 1000Can Ship Immediately
$ 14.13
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Package / Case: ISOPLUS247™
Supplier Device Package: ISOPLUS247™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 416W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 267nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 390 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFR24N100 is a fast-switching, high-current, 100-volt power MOSFET (metal oxide semiconductor field-effect transistor) that provides high performance and reliable operation for a wide range of applications. It is designed for use in high-power switching, current driving, and voltage regulation applications. The high current and fast switching characteristics make it suitable for use in a variety of power electronics applications such as motor drives, DC-DC converters, and AC-DC inverters.

The IXFR24N100 has a VDS (drain-source voltage) rating of 100 volts and an RDS (on-resistant) of 65 mOhms. It features low gate-charge (QG) and gate-threshold voltage (VGS) and is capable of switching frequencies up to 500 kHz. It has a wide range of temperature operating ranges from -55°C to +125°C and can handle up to 10A. It is also rugged, capable of handling up to 2.5kV (Human Body Model(HBM) ESD, Class3C.)

The overall structure of the IXFR24N100 consists of a series of N-channel insulated gate field-effect transistors which act as a voltage-controlled switch. When a positive voltage is applied to the gate of the FET, the current between the source and the drain is controlled by the voltage. As the drain-source voltage (VDS) increases, the resistance increases as well until it reaches its maximum specified value (RDS), at which point the current is limited, resulting in a linear current and voltage drop across the FET. The drain current (ID) can be adjusted by varying the applied gate voltage (VGS). When the gate voltage is below the threshold voltage (VGS(th)), the device is said to be “off”, no current is allowed to flow. When the gate voltage is raised above the threshold voltage, the device is said to be “on”, and a certain amount of current is allowed to flow.

The IXFR24N100 is suitable for a variety of power switching applications. It is an excellent choice for high-power switching, current driving, and voltage regulation applications. In electrical circuits, it can be used to control the current flow between two points. For example, it can be used as an analog voltage-controlled switch or as a switch in a bridge rectifier circuit. It can also be used in motor drives, DC-DC converters, and AC-DC inverters. Furthermore, it can be used to turn on and off lighting, small appliances, and other electronic components.

The IXFR24N100 is an ideal choice for those looking for a fast-switching, high-current, and reliable MOSFET. Its wide range of temperature ratings, high current handling capabilities, low on resistance, and linear voltage-current characteristic make it perfect for a variety of power electronics applications. It is also rugged and can withstand ESD shocks up to 2.5kV. With its wide temperature range and fast switching capabilities, the IXFR24N100 is an ideal choice for those looking for a reliable and high-performance MOSFET.

The specific data is subject to PDF, and the above content is for reference

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