IXFR90N20Q Allicdata Electronics
Allicdata Part #:

IXFR90N20Q-ND

Manufacturer Part#:

IXFR90N20Q

Price: $ 16.90
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 200V ISOPLUS247
More Detail: N-Channel 200V Through Hole ISOPLUS247™
DataSheet: IXFR90N20Q datasheetIXFR90N20Q Datasheet/PDF
Quantity: 1000
1 +: $ 15.35940
Stock 1000Can Ship Immediately
$ 16.9
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247™
Package / Case: ISOPLUS247™
Description

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The IXFR90N20Q is a shielded field effect transistor (FET) that is in the power MOSFET (metal-oxide-semiconductor field-effect transistor) family and is manufactured by International Rectifier. This device is capable of providing power to high-current industrial loads and switching applications, such as DC/DC converters, bridge rectifiers, motor control circuits and general purpose power supplies.

This particular transistor consists of a number of elements such as the drain, the source, the gate and the bulk. The drain and source are the primary electrical contacts and their function is to pass current from the gate to the drain and from the drain to the source. The gate is a junction between the drain and the source and is used to control the flow of current through the transistor, while the bulk is the silicon substrate which provides the mechanical and insulating properties.

The IXFR90N20Q is a single N-channel device, meaning it has a single ‘N-’ type source. The device is designed to handle very high currents and switching speeds, with a maximum current rating of 40A and a maximum drain-source voltage of 50V. It is capable of operating at up to 20MHz, making it suitable for high-speed applications. It also has a low gate to source capacitance which helps to reduce power dissipation and improve switching performance.

This device also has excellent thermal and ohmic performance, making it ideal for use in high power switching applications. It has a low on-state resistance and low gate charge, which reduces the amount of energy used for switching. Additionally, its maximum thermal resistance is 30°C/W, allowing for excellent heat dissipation.

The IXFR90N20Q is ideal for a wide range of applications, including DC/DC converters, bridge rectifiers, motor controllers and general-purpose power supplies. Its high switching speed and low gate charge make it an excellent choice for high frequency applications. With its excellent thermal and ohmic performance, it is also suitable for high power applications.

In summary, the IXFR90N20Q is a shielded power MOSFET in the single N-channel field effect transistor family. It is designed to provide power to high-current industrial loads and switching applications. This device has excellent thermal and ohmic performance and is capable of operating at up to 20MHz, making it suitable for high-speed applications. It is an ideal choice for applications such as DC/DC converters, bridge rectifiers, motor controllers and general-purpose power supplies.

The specific data is subject to PDF, and the above content is for reference

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