IXFR20N120P Allicdata Electronics
Allicdata Part #:

IXFR20N120P-ND

Manufacturer Part#:

IXFR20N120P

Price: $ 14.26
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1200V 13A ISOPLUS247
More Detail: N-Channel 1200V 13A (Tc) 290W (Tc) Through Hole IS...
DataSheet: IXFR20N120P datasheetIXFR20N120P Datasheet/PDF
Quantity: 1000
30 +: $ 12.95700
Stock 1000Can Ship Immediately
$ 14.26
Specifications
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Package / Case: ISOPLUS247™
Supplier Device Package: ISOPLUS247™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 290W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 193nC @ 10V
Series: HiPerFET™, PolarP2™
Rds On (Max) @ Id, Vgs: 630 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 1200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFR20N120P is a type of field-effect transistor (FET) designed specifically for applications where high voltage and current requirements need to be met. It is a single, power metal-oxide-semiconductor field-effect transistors (MOSFETs). This type of transistor is typically used for amplifying and switching digital signals.

Field-effect transistors (FETs) are transistors that charge carriers to one terminal of the gate. The voltage or current applied to the gate controls their operation. They are divided into two broad categories, unipolar and bipolar. Unipolar FETs are also called metal oxide semiconductor FETs (MOSFETs). MOSFETs are usage for digital signals. The IXFR20N120P belongs to the unipolar type. It is a “Power MOSFET”, which means it can handle higher levels of power than a standard MOSFETFET.

The IXFR20N120P has a rated drain-source voltage (VDS) of 200V and a continuous drain current (ID) of 20A. It has a low on-state resistance (RDS(on)) and high frequency operation. These features make it particularly suitable for applications such as motor drives, high voltage switching and high frequency power conversion.

One of the main features of the IXFR20N120P is its relatively low gate drive voltage requirements. This makes it easier to use and helps reduce the cost of the circuitry used to drive the gate and control the switching of the transistor. This, in turn, makes the IXFR20N120P suitable for applications where cost, size or weight are important considerations.

The working principle behind the IXFR20N120P is simple to understand. When a positive voltage is applied to the Gate, the MOSFET is turned on and current passes through the drain and source terminals. When the voltage is removed, the MOSFET is turned off and current stops flowing. This process can be reversed by applying a negative voltage to the Gate, turning the transistor off and on again. The IXFR20N120P is therefore a great choice for applications that require switching at high voltage and high frequency.

The IXFR20N120P is one of the most widely used power transistors. It is robust, reliable and relatively easy to use. Its features such as high frequency operation, low gate drive voltage and low on-state resistance make it a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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