IXFR18N90P

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Due to advances in technology and increasing consumer demand, IXFR18N90P has become a popular choice for power applications.

IXFR18N90P is an advanced fully integrated 900V insulated gate FET (IGFET) that is suitable for a wide range of industrial, consumer and telecommunications applications. It features a high breakdown voltage, low input capacitance, high efficiency operation and low on-state resistance (RDS(on)) and low gate charge, making it ideal for power switching applications including inverters and DC/DC converters.

IXFR18N90P FETs are designed using a combination of field-effect transistors (FETs) and Metal–oxide–silicon (MOSFETs). FETs, also known as unipolar or junction-type transistors, have three electrodes—the source, gate and drain—and operate by modulating the charge carriers (electrons and holes) between them. The voltage applied to the gate electrode determines the current flowing through the drain of the FET. MOSFETs, on the other hand, consist of two layers of MOSFETs and are designed to increase the overall breakdown voltage together, resulting in superior power handling characteristics.

One of the main advantages of IXFR18N90P is its ability to handle high voltage without significant losses. Its high breakdown voltage means that it can handle significantly higher voltages than other FETs and MOSFETs. It also has low input capacitance, meaning it requires less energy to operate, enabling it to achieve higher efficiency operation. The low gate charge further reduces energy consumption and enhances performance.

The IXFR18N90P’s low on-state resistance (RDS(on)) provides more current carrying capability, which is essential for high performance switching applications. This feature is useful for applications that require high levels of power, as the switch can handle larger loads. Furthermore, the IXFR18N90P offers excellent ruggedness, aiding its operation in tough industrial environments.

In summary, IXFR18N90P FETs and MOSFETs provide a highly efficient solution to power applications as they feature a high breakdown voltage, low input capacitance, high efficiency operation, low on-state resistance (RDS(on)) and low gate charge. Combined, these features make IXFR18N90P an attractive choice for industrial, consumer and telecommunications applications with demanding power requirements.

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