IXFR102N30P Allicdata Electronics
Allicdata Part #:

IXFR102N30P-ND

Manufacturer Part#:

IXFR102N30P

Price: $ 8.61
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 300V 60A ISOPLUS247
More Detail: N-Channel 300V 60A (Tc) 250W (Tc) Through Hole ISO...
DataSheet: IXFR102N30P datasheetIXFR102N30P Datasheet/PDF
Quantity: 1000
30 +: $ 7.74711
Stock 1000Can Ship Immediately
$ 8.61
Specifications
Vgs(th) (Max) @ Id: 5V @ 4mA
Package / Case: ISOPLUS247™
Supplier Device Package: ISOPLUS247™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Series: PolarHT™ HiPerFET™
Rds On (Max) @ Id, Vgs: 36 mOhm @ 51A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 300V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFR102N30P is an N-channel MOSFET that\'s used in various electronic circuits. It has a low on-state resistance (Rdson) and a high level of threshold voltage. It\'s mostly used in power electronics and motor control systems.

The IXFR102N30P has a max drain-source voltage rating of 30V and an on-state resistance of 0.0215 Ohms. It has a typical threshold voltage of 2.5V and is rated for up to 4A of continuous drain current. It features a very low gate charge and a fast switching time.

In terms of its application field, the IXFR102N30P has a wide range of uses. It can be used in power supplies, DC/DC converters, motor control systems, audio amplifiers, robotics, and automotive systems. It\'s also widely used in industrial power control applications, such as HVAC systems and refrigerators.

The IXFR102N30P MOSFET works on the principle of gate control, where it\'s operated by the gate voltage. It has a channel between its source and drain that\'s pinched off and turned off with a negative gate voltage, and turned on with a positive gate voltage. It works using the two terminal principle – by applying an appropriate voltage across the gate and source, the channel will pinch off and the MOSFET will be turned off. The electric current will pass through the MOSFET once the voltage applied to the gate is of a sufficient magnitude.

In terms of electric characteristics, the IXFR102N30P MOSFET has a low on-state resistance, fast switching time, and a low gate charge. The MOSFET will also provide excellent performance in terms of its avalanche breakdown capabilities and electro-thermal stability. Its thermal stability ensures it maintains its switching intensity over a wide temperature range, making it suitable for use in automotive applications.

Overall, the IXFR102N30P is a very versatile MOSFET that can be used in a wide range of electronic circuits and motor control applications. Its low on-state resistance, fast switching time, and low gate charge make it particularly suitable for these applications. It also provides excellent performance in terms of overload capability, electro-thermal stability, and avalanche breakdown. This makes it a great choice for those applications where reliability and performance are essential.

The specific data is subject to PDF, and the above content is for reference

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