Allicdata Part #: | IXFV110N10P-ND |
Manufacturer Part#: |
IXFV110N10P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 110A PLUS220 |
More Detail: | N-Channel 100V 110A (Tc) 480W (Tc) Through Hole PL... |
DataSheet: | IXFV110N10P Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 4mA |
Package / Case: | TO-220-3, Short Tab |
Supplier Device Package: | PLUS220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 480W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3550pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | PolarHT™ HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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IXFV110N10P is a type of Field Effect Transistor (FET) whose working principle is based on the phenomenon of an electric field controlling the flow of electrons. It is a MOSFET (metal-oxide-semiconductor FET) with a single unit cell, which means that the electrons don’t need to cross a PN junction in order to become electrically active. This makes the device highly efficient and also reduces noise, since there is no need to build up a charge in the device. This makes IXFV110N10P an ideal choice for high-speed and high-power applications where noise needs to be kept to a minimum.
IXFV110N10P has a number of applications mainly in the areas of high-performance circuits, power supplies and analog circuits. The device is often used in digital-to-analog converters (DACs), pulse-width modulation systems, Class D amplifiers and power switching devices. It is also used for data transmission in fiber-optic networks, providing a cost-effective solution when compared to its competition.
In the power supply area, IXFV110N10P can be used in buck converters, bank power supplies, power inverters and even solar inverters. Its high frequency switching capabilities and high voltage drive features make this device a preferred choice for various types of power supplies. This high performance device is also capable of providing high switching frequency and fast turn-on and turn-off times.
It is also used in several fields of analog electronics including motor control, RF and analog circuits and mixers. Its low output capacitance and high current handling capabilities make it an ideal choice for motor controllers and RF circuits. This FET can also be used in the design of mixers that require high-bandwidth operation and noise suppression. In summary, IXFV110N10P is a highly versatile MOSFET device with numerous applications in a wide range of fields.
In terms of its working principle, IXFV110N10P utilizes the phenomenon of an electric field controlling the flow of electrons. It consists of a drain, gate and source electrodes. When a voltage is applied to the gate electrode, it forms an electric field which modulates the flow of electrons between the source and drain electrodes. The voltage applied to the gate varies the width of the depletion region between the drain and source, thus controlling the conductivity of the channel.
In conclusion, IXFV110N10P is an efficient and highly versatile MOSFET device that can be used in a variety of applications across different fields. Its working principle is based on the principle of an electric field controlling the flow of electrons between the source and drain electrodes. It is mainly used in high-performance circuits, power supplies and analog circuits, as well as motor control and RF circuits.
The specific data is subject to PDF, and the above content is for reference
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