Allicdata Part #: | IXFV15N100PS-ND |
Manufacturer Part#: |
IXFV15N100PS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 15A PLUS220SMD |
More Detail: | N-Channel 1000V 15A (Tc) 543W (Tc) Surface Mount P... |
DataSheet: | IXFV15N100PS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 6.5V @ 1mA |
Package / Case: | PLUS-220SMD |
Supplier Device Package: | PLUS-220SMD |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 543W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5140pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 97nC @ 10V |
Series: | HiPerFET™, PolarP2™ |
Rds On (Max) @ Id, Vgs: | 760 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IXFV15N100PS is a type of Transistors - FETs, MOSFETs - Single that is produced by IXYS semiconductors at their IXYS Integrated Circuits Division.IXFV15N100PS, also known as PowerTrench MOSFET, is designed to meet high voltage and high current requirements of power management related applications. It has high blocking capability of 150 volts and can easily handle up to 15 amps of constant load current. Furthermore, it is rated at 100 amperes of peak pulsed current and has a wide operating temperature range of -55°C to 175°C.The IXFV15N100PS features excellent RDS(on) performance and fast switching speeds. It has extremely low on-resistance, making it ideal for low power loss applications. It also has an integrated "body diode," which means that the body diode will be automatically enabled under certain conditions. This allows the device to be turned off at any time, even when the gate voltage is low.In terms of application field, the IXFV15N100PS is suitable for high current switching applications such as motor control, power supply systems, and UPS. It is also suitable for general purpose power management including synchronous rectification and other power switching circuits.In terms of working principle, the IXFV15N100PS is a type of Field-Effect Transistor (FET) that operates in the depletion-mode. In this type of FET, the channel is formed by electrically induced depletion regions, which can be likened to "holes" cut through a type of semiconductor material. The depletion regions are formed by applying a voltage between the gate and the source and drain terminal. When this voltage is applied, the electrons near the gate absorb the extra energy and move away, leaving behind a depleted region. This region acts like an electrical barrier, preventing current from flowing between the source and drain.The channel then acts like a switch that can be opened or closed by applying a voltage across the gate and source-drain, allowing current to pass through or blocking it. This makes the FET ideal for high current switching applications and also allows for higher currents through a low on-resistance without thermal runaway issues.In conclusion, the IXFV15N100PS is a type of Transistors - FETs, MOSFETs - Single that is mainly used for high current switching applications. It has high voltage blocking capability, high current handling capability, and low on-resistance. It also has an integrated body diode, making it suitable for low power loss applications. Furthermore, it operates in a depletion-mode, whose working principle is based on electricity-induced depletion regions.
The specific data is subject to PDF, and the above content is for reference
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