Allicdata Part #: | IXFV22N60P-ND |
Manufacturer Part#: |
IXFV22N60P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 22A PLUS220 |
More Detail: | N-Channel 600V 22A (Tc) 400W (Tc) Through Hole PLU... |
DataSheet: | IXFV22N60P Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5.5V @ 4mA |
Package / Case: | TO-220-3, Short Tab |
Supplier Device Package: | PLUS220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 400W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 58nC @ 10V |
Series: | HiPerFET™, PolarHT™ |
Rds On (Max) @ Id, Vgs: | 350 mOhm @ 11A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXFV22N60P is a Type V N-Channel MOSFET designed primarily for power switching applications. It belongs to a family of field-effect transistors that comes with an integrated drain-source circuit. This device features a wide range of benefits including low on-resistance, low input/output capacitance, and a very low gate charge. This makes it suitable for high-efficiency power conversion. As the device has an open-drain feature, it is also very easy to use, making it a great choice for many applications.
The IXFV22N60P has a wide application field. It is suited for applications involving high-frequency power conversion, such as switching power supply products, and especially in communications and DC-DC converters. It is also suitable for low-frequency applications such as lighting dimmers, and motor drives. The device is intended for use in power switching, and can be used in both high-voltage and low-voltage circuits. This flexibility makes it a great choice for a variety of power supply applications.
At the heart of the IXFV22N60P is the MOSFET, which is a three-terminal electronic device. It is composed of two insulated gate electrodes and a semiconductor channel between them. When a signal is applied to the gate electrode, a voltage drop is created, creating a conducting path between the drain and the source. This allows current to flow across the gate, and the transistor acts as a switch. The device is designed to perform this switching action in a very fast and efficient way.
The IXFV22N60P is designed to operate at a wide range of operating conditions, making it well-suited for a variety of applications. Its low input/output capacitance allows it to switch quickly and efficiently, with minimal losses. The device is also very efficient in terms of power dissipation, helping reduce power consumption in applications that require fast switching. Additionally, the device can also handle large amounts of current, making it a good choice for high-power applications.
The IXFV22N60P can be used for a wide range of power switching applications, ranging from high-frequency switching to low-frequency dimming. Its open-drain feature makes it easy to use, and its wide voltage and current ranges make it suitable for a variety of power applications. It is a highly reliable and efficient device that enables fast and efficient power conversion.
The specific data is subject to PDF, and the above content is for reference
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