
Allicdata Part #: | IXFV12N120P-ND |
Manufacturer Part#: |
IXFV12N120P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1200V 12A PLUS220 |
More Detail: | N-Channel 1200V 12A (Tc) 543W (Tc) Through Hole PL... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 6.5V @ 1mA |
Package / Case: | TO-220-3, Short Tab |
Supplier Device Package: | PLUS220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 543W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5400pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 103nC @ 10V |
Series: | HiPerFET™, PolarP2™ |
Rds On (Max) @ Id, Vgs: | 1.35 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 1200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IXFV12N120P is a type of transistor that falls under the category of Field-Effect Transistor (FET), and specifically, a Metal-Oxide-Semiconductor FET (MOSFET). It was designed to offer an improved on-resistance, gate threshold voltage, safe operating area and low gate charge. This type of transistor has a single-gate structure, meaning it has one source-drain path, so it manages current and voltage in one direction.
IXFV12N120P transistors have a high drain current capacity of 12A, and are suitable for a variety of applications. This includes motor control, web-server LV power, laptop adapter supplies and solar inverters. IXFV12N120Ps can also be used in amplifiers, high-power switches, variable speed drives and audio power supplies.
The IXFV12N120P is an enhancement mode transistor, which means it is usually operated with a source voltage greater than ground. When the applied gate voltage is greater than the threshold voltage of the transistor, current will be allowed to flow between the source and drain. This is known as having a ‘positive’ channel, and is how this type of transistor has its superior power handling capabilities.
Unlike other types of transistors, IXFV12N120Ps are designed to be very fast switching. This means that they are able to switch from off to on in as little as 10 nanoseconds. This makes them ideal for high-power switching applications, such as motor control or audio power supplies.
When choosing a IXFV12N120P for an application, it is important to select one that is suited to the particular application. This can be determined by looking at the transistor’s ratings, such as its drain current and drain voltage ratings. It is also important to bear in mind the type of triggering needed for the application, and if the IXFV12N120P can provide the necessary triggering voltage.
In summary, IXFV12N120P transistors are a type of Field-Effect Transistor (FET) designed for high-power applications. This type of transistor is useful in applications such as motor control, web-server LV power, laptop adapter supplies and solar inverters. They have a high drain current capacity and fast switching capabilities, making them ideal for high-power applications. When selecting a IXFV12N120P for an application, it is important to consider its ratings and the type of triggering it will require.
The specific data is subject to PDF, and the above content is for reference
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