IXFV12N120P Allicdata Electronics
Allicdata Part #:

IXFV12N120P-ND

Manufacturer Part#:

IXFV12N120P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1200V 12A PLUS220
More Detail: N-Channel 1200V 12A (Tc) 543W (Tc) Through Hole PL...
DataSheet: IXFV12N120P datasheetIXFV12N120P Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Package / Case: TO-220-3, Short Tab
Supplier Device Package: PLUS220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 543W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
Series: HiPerFET™, PolarP2™
Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 1200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IXFV12N120P is a type of transistor that falls under the category of Field-Effect Transistor (FET), and specifically, a Metal-Oxide-Semiconductor FET (MOSFET). It was designed to offer an improved on-resistance, gate threshold voltage, safe operating area and low gate charge. This type of transistor has a single-gate structure, meaning it has one source-drain path, so it manages current and voltage in one direction.

IXFV12N120P transistors have a high drain current capacity of 12A, and are suitable for a variety of applications. This includes motor control, web-server LV power, laptop adapter supplies and solar inverters. IXFV12N120Ps can also be used in amplifiers, high-power switches, variable speed drives and audio power supplies.

The IXFV12N120P is an enhancement mode transistor, which means it is usually operated with a source voltage greater than ground. When the applied gate voltage is greater than the threshold voltage of the transistor, current will be allowed to flow between the source and drain. This is known as having a ‘positive’ channel, and is how this type of transistor has its superior power handling capabilities.

Unlike other types of transistors, IXFV12N120Ps are designed to be very fast switching. This means that they are able to switch from off to on in as little as 10 nanoseconds. This makes them ideal for high-power switching applications, such as motor control or audio power supplies.

When choosing a IXFV12N120P for an application, it is important to select one that is suited to the particular application. This can be determined by looking at the transistor’s ratings, such as its drain current and drain voltage ratings. It is also important to bear in mind the type of triggering needed for the application, and if the IXFV12N120P can provide the necessary triggering voltage.

In summary, IXFV12N120P transistors are a type of Field-Effect Transistor (FET) designed for high-power applications. This type of transistor is useful in applications such as motor control, web-server LV power, laptop adapter supplies and solar inverters. They have a high drain current capacity and fast switching capabilities, making them ideal for high-power applications. When selecting a IXFV12N120P for an application, it is important to consider its ratings and the type of triggering it will require.

The specific data is subject to PDF, and the above content is for reference

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