IXFV18N60PS

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IXFV18N60PS is a 600V, 18A, IXYS N-channel enhancement mode power MOSFET. It has a 3.2mΩ typical drain-source On-resistance, maximum power dissipation rating of 370W, and an avalanche rating of 400W.

The IXFV18N60PS belongs to the class of power MOSFETs, which are built with advanced MOSFET chip performance and a low forward voltage, high frequency/high voltage switch with minimal on-state resistance.

The product is engineered for use in switching, power supply, and power conversion applications. It is capable of handling a wide variety of regulated and unregulated power sources, from general-purpose applications to special high-power, lightweight applications.

IXFV18N60PS offers several benefits including low on-state resistance, enhanced gate charge, improved gate turn-off dynamics, reduced switching loss, improved noise immunity, and minimal gate leakage. Its features make it well-suited for precision and high-reliability design.

The internal structure of the IXFV18N60PS enables it to be applied in an oscillator circuit, configured in linear mode in an amplifier stage, or used as a switching device. In an oscillator circuit, the IXFV18N60PS helps to generate sinusoidal outputs. In a linear amplifier stage, it controls small signal input and translates it into a larger output. Alternatively, when functioning as a switching device, the IXFV18N60PS provides low switching losses, rapid rise and fall times, and improved noise immunity.

The IXFV18N60PS is available in an SOT-223 package, with a maximum junction temperature of 150°C. Its lower gate capacitance and high forward voltage allows for improved thermal performance and higher switching speeds. Its features allow for increased current carrying capacity and improved power density, making it an attractive option for a wide range of applications.

In summary, the IXFV18N60PS is designed to facilitate high-speed power switch applications. It offers the reliability and efficiency required for power conversion, switching, and regulating applications. Its low on-state resistance and high power rating enable it to remain efficient while delivering high levels of power.

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