Allicdata Part #: | IXFV16N80P-ND |
Manufacturer Part#: |
IXFV16N80P |
Price: | $ 4.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 800V 16A PLUS220 |
More Detail: | N-Channel 800V 16A (Tc) 460W (Tc) Through Hole PLU... |
DataSheet: | IXFV16N80P Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 3.83191 |
Vgs(th) (Max) @ Id: | 5V @ 4mA |
Package / Case: | TO-220-3, Short Tab |
Supplier Device Package: | PLUS220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 460W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 71nC @ 10V |
Series: | HiPerFET™, PolarHT™ |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFV16N80P is an N-channel power field-effect transistor (FET), meaning that it is a non-capacitive device that utilizes an electric field to work. It is a single MOSFET, which means it has an insulated-gate structure that functions as a semiconductor and requires relatively low gate voltage to switch on (turn on an appliance or device). This makes the IXFV16N80P the perfect choice for power conversion, control and low-voltage systems.
The IXFV16N80P is built on an isolated substrate, which ensures improved reliability and high-temperature operation. This also makes the IXFV16N80P less prone to EMI and inductive heating, allowing it to work in power management systems where electromagnetic interference (EMI) and inductive heating can be a problem.
The IXFV16N80P has an 8A continuous drain current, 30A pulse drain current, 13A source current and 60V drain-source breakdown voltage. It also has a 0.25ohm/59.9mohm on-resistance (RDS(ON)) and a high input capacitance (Ciss).
The IXFV16N80P typically has a low gate threshold voltage (Vgs) of 3.4V, making it suitable for applications requiring low operating voltages. The level of control and efficiency is also improved, meaning it is ideal for power control systems and power management systems.
Aside from the above performance characteristics, the IXFV16N80P has an improved load handling capability, meaning it can handle more power while still providing good switching performance and low energy losses during operation.
The IXFV16N80P is typically used in high frequency switching applications, such as DC-DC converter, inverter and motor control. As it is a single MOSFET, it is also suitable for use in applications requiring low on-resistance and low gate voltage.
Paired with its excellent switching performance, the IXFV16N80P is ideal for use in AC/DC, DC/DC and DC/AC power conversion, control and low-voltage systems. It is also used in power management and high frequency switching systems, such as DC/AC inverters and motor controllers.
In conclusion, the IXFV16N80P is an ideal choice for power conversion, control and low-voltage systems, thanks to its excellent switching performance and improved load handling capabilities. It is a single MOSFET, and is suitable for applications requiring low on-resistance and low gate voltage.
The specific data is subject to PDF, and the above content is for reference
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