IXFV22N60PS Allicdata Electronics
Allicdata Part #:

IXFV22N60PS-ND

Manufacturer Part#:

IXFV22N60PS

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 22A PLUS220-SMD
More Detail: N-Channel 600V 22A (Tc) 400W (Tc) Surface Mount PL...
DataSheet: IXFV22N60PS datasheetIXFV22N60PS Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Package / Case: PLUS-220SMD
Supplier Device Package: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 400W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Series: HiPerFET™, PolarHT™
Rds On (Max) @ Id, Vgs: 350 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IXFV22N60PS is a Power MOSFET developed by IXYS to be used in a wide range of power applications in consumer, industrial, communications and IT sectors. This Power MOSFET features a high power density of up to 108A, which makes it ideal for applications where a large current is necessary. It also has an improved thermal performance over competing products, making it a good choice for applications where lower power consumption is desired.

The IXFV22N60PS belongs to a group of power-switching transistors called Field-Effect Transistors (FETs). FETs work on the principle of a capacitive effect called “field-effect” which can be used to regulate the electrical current flow. Field effect transistors are capable of higher voltage and current handling as compared to their BJT counterparts.

The IXFV22N60PS is classified as a single-channel MOSFET, meaning it has a single gate terminal for controlling the current flow. The single gate (G) terminal is used to control the channel current. When the gate voltage (VGS) is lower than the threshold voltage, the current flow is blocked. When VGS exceeds the threshold voltage, the current flow is allowed.

The IXFV22N60PS is particularly suitable for applications in the consumer, industrial, communications and IT sectors. It can be used in a variety of power applications such as motor control, switched-mode power supplies and DC/DC converters. It is also suitable for high speed switching, power distribution, switching power supply circuits, power transistors, low-noise transistors and load controllers.

In addition, the IXFV22N60PS has an improved thermal performance over competing products, making it a good choice for applications where lower power consumption is desired. It has a very low on-state resistance of 22mΩ and its fast switching times allow for increased efficiency and performance.

The IXFV22N60PS is a versatile and powerful Power MOSFET which makes it ideal for a wide range of power applications. It has a high power density, improved thermal performance and fast switching times, making it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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