Allicdata Part #: | IXFV96N15PS-ND |
Manufacturer Part#: |
IXFV96N15PS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 150V 96A PLUS220-S |
More Detail: | N-Channel 150V 96A (Tc) 480W (Tc) Surface Mount PL... |
DataSheet: | IXFV96N15PS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 4mA |
Package / Case: | PLUS-220SMD |
Supplier Device Package: | PLUS-220SMD |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 480W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3500pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | PolarHT™ HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 96A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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IXFV96N15PS Application Field and Working Principle
The IXFV96N15PS is a large-scale metal-oxide-semiconductor field-effect transistor (MOSFET). It belongs to the subtype of Single FETs and MOSFETs, and combined with its voltage and current carrying capacity make it suitable for various industrial applications where power and high current are involved.
Overview & Characteristics
The IXFV96N15PS transistor is an insulated gate. It consists of a p-channel, an N-channel, and a gate electrode, all of which are separated by a dielectric layer. The device uses a unique technology to control the gate threshold voltage with a very low on-state resistance. This offers excellent performance and minimized power consumption in the operating conditions.
It features a maximum voltage of 600V, a maximum current rating of 7.5A, and a low gate capacitance of 0.37pF for excellent switching performance. The IXFV96N15PS is complemented with an integrated dynamic self-protection circuitry and a plethora of safety options. It is available in a TO-263 package, suitable for automated assembly lines.
Mechanism of Operation
The working of an insulated gate type MOSFET is based on the principle of electrostatic attraction and repulsion. In this type of device, the gate electrode is completely isolated from the rest of the device by a thin insulating layer. In the absence of any externally-applied voltage, majority charge carriers do not flow through the device.
When a voltage of sufficient magnitude is applied to the gate electrode, it creates an electric field which exerts an electrostatic force on the charge carriers in the channel, thus creating an induced channel between the source and drain regions. This channel allows the majority charge carriers to flow through the device, and this increase in the current flow is what gives the device its unique voltage control characteristics.
Common Applications
The IXFV96N15PS is usually employed in applications where power, speed, and reliability are important factors. It is capable of providing high current and excellent switching performance, thus making it suitable for different kinds of high-power applications. These include power supplies, motors and pumps, switching applications, and other high-current applications. It is also suitable for a variety of general-purpose, low-power applications, such as consumer electronics and small motors.
Conclusion
The IXFV96N15PS is a high-performance composite MOSFET that is suitable for implementations where high current and power, as well as excellent switching performance, are needed. It features excellent immunity to noise and a very low on-state resistance, thus minimizing power consumption. It is available in a convenient TO-263 package and has a large operating temperature range. It is capable of withstanding high voltage and is suitable for a variety of applications, including large-scale industrial applications.
The specific data is subject to PDF, and the above content is for reference
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