Allicdata Part #: | IXFV14N80PS-ND |
Manufacturer Part#: |
IXFV14N80PS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 800V 14A PLUS220-S |
More Detail: | N-Channel 800V 14A (Tc) 400W (Tc) Surface Mount PL... |
DataSheet: | IXFV14N80PS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5.5V @ 4mA |
Package / Case: | PLUS-220SMD |
Supplier Device Package: | PLUS-220SMD |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 400W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3900pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 61nC @ 10V |
Series: | HiPerFET™, PolarHT™ |
Rds On (Max) @ Id, Vgs: | 720 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXFV14N80PS is a high performance N-channel MOSFET. This type of MOSFET is a type of Field-Effect Transistor (FET) commonly used for a variety of electronic applications. It is an ideal choice for high power applications that require a device with high switching speed and low on-resistance.
The IXFV14N80PS is designed to control power in both directions. It is composed of a semiconductor p-type substrate and a conductive drain surrounded by a gate region that controls the source-drain current. The gate region is insulated from the two other regions, which allows for separate control of the source-drain current. The gate requires an electrical current to be applied in order to reduce the voltage between the source and ground and thus control the flow of current through the device.
The IXFV14N80PS is often used in applications that require high-speed switching and/or low voltage operation. It is able to switch current at much higher speeds than traditional MOSFETs, making it ideal for high-frequency switching applications. Additionally, its low on-resistance makes it particularly suitable for use in low-voltage applications. This MOSFET is also an excellent choice for high-current power systems and a wide range of AC and DC motor control applications.
The IXFV14N80PS is designed for use in applications that require efficient power control and a low voltage drop across the device. Its low on-resistance reduces the voltage drop across the device, allowing for better power efficiency in applications that require higher currents. Additionally, the device is designed for high switching speed and high current capacity, making it especially suitable for motor driver and PFC applications.
The IXFV14N80PS has a drain-source voltage rating of up to 800V and a drain-source current rating of 14A or higher depending on the device variant. The device is also available in a variety of packages, including TO-220, TO-252, and D-pak. It is typically used in DC-DC converters and industrial motor drivers, as well as other power control applications.
The IXFV14N80PS is an ideal choice for applications that require a high switching speed, a low on-resistance, and a low voltage drop. It is often used in high-power applications that require highly efficient power control and a low voltage drop across the device. The IXFV14N80PS is a versatile and reliable MOSFET suitable for a wide variety of power control applications.
The specific data is subject to PDF, and the above content is for reference
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