IXFV26N60P

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The IXFV26N60P is a device developed by Infineon, a leading provider of semiconductor solutions. It is a fast high voltage MOSFET that is suitable for many applications, most notably in Uninterruptible Power Supply (UPS) systems and circuit protection. With its low saturation voltage and low gate charge, it enables a simple, cost-effective and reliable design solution.

Application Field of IXFV26N60P

IXFV26N60P can be widely utilized for high voltage switching applications where high current is not an issue. It is used in UPS systems for power routing, energy storage, and transfer switching. It is also used in circuit protection that ensures reliable control in the event of an over-voltage or over-current. IXFV26N60P has built-in short-circuit protection for safe and reliable operation. Other areas where IXFV26N60P is often used include rectifier and switching circuits, DC-DC converters, power supplies, and power controllers.

Working Principle of IXFV26N60P

The IXFV26N60P is a MOSFET, or metal-oxide-semiconductor field-effect transistor. Its working principle is based on two transistors connected in series with a common gate. This device allows the current to flow between the drain and the source. When the voltage on the gate is increased, the current conducted through the device increases. As this type of MOSFET works at a high voltage, it requires a relatively large gate voltage to operate, typically 4V to 6V.

At normal operation, the IXFV26N60P MOSFET allows a high current to flow through it, as it has very low "on" resistance. This makes it ideal for applications such as rectifiers, DC-DC converters, and other high power switching applications. As the device does not require a large gate voltage, it can be switched quickly for fast reaction and short switching time.

The IXFV26N60P has the advantage of allowing a high current flow with low power consumption. This makes it suitable for high efficiency circuits, as it dissipates very low power during operation. Another advantage of the IXFV26N60P is its low saturation voltage, which is typically less than 2.2V, making it suitable for high voltage circuits.

Conclusion

The IXFV26N60P is a fast high voltage MOSFET developed by Infineon. It is suitable for many applications, most notably in Uninterruptible Power Supply (UPS) systems and circuit protection. With its low saturation voltage and low gate charge, it enables a simple, cost-effective and reliable design solution. The device has very low "on" resistance allowing a high current flow with low power consumption, and it also has a low saturation voltage, making it ideal for high voltage applications.

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