Allicdata Part #: | IXFV36N50PS-ND |
Manufacturer Part#: |
IXFV36N50PS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 36A PLUS220-SMD |
More Detail: | N-Channel 500V 36A (Tc) 540W (Tc) Surface Mount PL... |
DataSheet: | IXFV36N50PS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 4mA |
Package / Case: | PLUS-220SMD |
Supplier Device Package: | PLUS-220SMD |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 540W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 93nC @ 10V |
Series: | HiPerFET™, PolarP2™ |
Rds On (Max) @ Id, Vgs: | 170 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXFV36N50PS is a type of power field-effect transistor (FET) which is capable of providing high current and high voltage switching to a variety of types of electrical applications. This type of FET is often used in applications such as motor and battery control, switching electronics, and power supplies.
A FET is a three-terminal semiconductor device that works by controllably allowing electrons and/or holes to flow through an electric field. FETs transistors are switching devices that are used to control current and voltage in a circuit. In the case of the IXFV36N50PS, the source is the first terminal, the gate is the second terminal, and the drain is the third terminal. The gate terminal is used to control the flow of current, which is described as being “pulsed”, meaning that the current can either be on or off, depending on the voltage applied to the gate.
The structure of the IXFV36N50PS is a vertical, field-grade MOSFET, which stands for metal-oxide-semiconductor field-effect transistor. The way in which this type of transistor works is by use of an insulating layer between the gate and the source. This insulating layer is also known as the gate oxide layer. The gate oxide layer acts as a barrier, preventing current from flowing until the voltage applied to the gate is sufficient for electrons to pass through it.
When the voltage applied to the gate is low, the flow of current is restricted, and the transistor is said to be off. When the voltage applied to the gate is high, the gate oxide layer is overcome, and the flow of electrons is allowed. This is known as biasing the transistor, and when the transistor is “on”, it is said to be in its “saturated” state.
The IXFV36N50PS offers a wide range of benefits, including its low joule rating, which allows more efficient use of power, and its high voltage withstanding capability, enabling the use of higher voltage circuits. Additionally, this vertical FET is capable of providing a very low on-resistance value, which is beneficial for applications in which low power dissipation is desired.
The IXFV36N50PS offers a high degree of functionality and provides a cost-effective solution for applications in which high voltage, high current, and low-power dissipation are desired. These features make the IXFV36N50PS an ideal choice for high-current and high-voltage switching applications, as it provides an efficient, reliable, and cost-effective solution.
The specific data is subject to PDF, and the above content is for reference
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