IXFV36N50PS Allicdata Electronics
Allicdata Part #:

IXFV36N50PS-ND

Manufacturer Part#:

IXFV36N50PS

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 36A PLUS220-SMD
More Detail: N-Channel 500V 36A (Tc) 540W (Tc) Surface Mount PL...
DataSheet: IXFV36N50PS datasheetIXFV36N50PS Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 4mA
Package / Case: PLUS-220SMD
Supplier Device Package: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 540W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
Series: HiPerFET™, PolarP2™
Rds On (Max) @ Id, Vgs: 170 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IXFV36N50PS is a type of power field-effect transistor (FET) which is capable of providing high current and high voltage switching to a variety of types of electrical applications. This type of FET is often used in applications such as motor and battery control, switching electronics, and power supplies.

A FET is a three-terminal semiconductor device that works by controllably allowing electrons and/or holes to flow through an electric field. FETs transistors are switching devices that are used to control current and voltage in a circuit. In the case of the IXFV36N50PS, the source is the first terminal, the gate is the second terminal, and the drain is the third terminal. The gate terminal is used to control the flow of current, which is described as being “pulsed”, meaning that the current can either be on or off, depending on the voltage applied to the gate.

The structure of the IXFV36N50PS is a vertical, field-grade MOSFET, which stands for metal-oxide-semiconductor field-effect transistor. The way in which this type of transistor works is by use of an insulating layer between the gate and the source. This insulating layer is also known as the gate oxide layer. The gate oxide layer acts as a barrier, preventing current from flowing until the voltage applied to the gate is sufficient for electrons to pass through it.

When the voltage applied to the gate is low, the flow of current is restricted, and the transistor is said to be off. When the voltage applied to the gate is high, the gate oxide layer is overcome, and the flow of electrons is allowed. This is known as biasing the transistor, and when the transistor is “on”, it is said to be in its “saturated” state.

The IXFV36N50PS offers a wide range of benefits, including its low joule rating, which allows more efficient use of power, and its high voltage withstanding capability, enabling the use of higher voltage circuits. Additionally, this vertical FET is capable of providing a very low on-resistance value, which is beneficial for applications in which low power dissipation is desired.

The IXFV36N50PS offers a high degree of functionality and provides a cost-effective solution for applications in which high voltage, high current, and low-power dissipation are desired. These features make the IXFV36N50PS an ideal choice for high-current and high-voltage switching applications, as it provides an efficient, reliable, and cost-effective solution.

The specific data is subject to PDF, and the above content is for reference

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