IXFV18N60P

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The IXFV18N60P is a N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor), which is a type of field effect transistor that operates by using an electric field to control the shape and concentration of electrons within the channel of the transistor. This type of transistor is particularly useful for high voltage and high current applications as it can handle large amounts of current, as well as switching power quickly and efficiently.

The IXFV18N60P specifically is an insulated gate, depletion mode, N-Channel MOSFET and it is made from high-performance trench MOSFET technology. It is designed specifically for applications that require very low on-resistance, fast switching speed and low gate charge. This MOSFET has a breakdown voltage of over 600 volts, so it can handle high voltage applications.

The main application field of the IXFV18N60P is in automotive applications such as engine control, body integration, power train and on-board diagnostic control. It is also often used in power supplies, motor drives, battery protection circuits and other applications that require high voltage and current control. The IXFV18N60P also features a low on-state resistance and high switching speed, making it ideal for high-speed switching applications.

The IXFV18N60P utilizes a standard MOSFET structure with a P-type gate and substrate. In the MOSFET’s structure, the silicon substrate acts as the drain and it is connected to the gate. The source is then connected to the gate, which creates an electric field around the channel. When power is applied to the gate, electrons in the channel are “pinched off”, creating a channel in the substrate. When electrons pass through this channel they form a current in the drain and the source.

The MOSFET can either be depletion mode or enhancement mode. In the depletion mode, the channel is already present between the drain and source, so when a source voltage is applied, the channel will be widened and the current will increase. In the enhancement mode, no channel is present between the drain and source, so when a source voltage is applied, the channel will be created and the current will increase.

The IXFV18N60P is specifically designed to offer superior levels of performance in automotive applications. The low on-state resistance and high switching speed give the IXFV18N60P an edge, so it is suitable for applications that require precise control, speed and accuracy. The 600V breakdown voltage also makes it an ideal choice for high voltage applications.

In summary, the IXFV18N60P is a N-Channel MOSFET with a breakdown voltage of over 600V. It is an insulated gate, depletion mode MOSFET and it is made from high-performance trench MOSFET technology. It is designed for automotive applications such as engine control, body integration and power train control, as well as power supplies, motor drives and battery protection circuits. The IXFV18N60P has a low on-state resistance and a high switching speed, making it perfect for high-speed switching applications.

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