IXFV18N90PS

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IXFV18N90PS is a power semiconductor device made with an advanced planar technology. This device is a single, high-voltage transistor with a high current capability and a low On-resistance. It is intended for use as an introduction to this technology and an aid to the understanding of its principles of operation.

The IXFV18N90PS is a high-voltage, high-current N-Channel MOSFET. It is a so-called Vertical DMOSFET, where the channel is formed in a vertical direction in the middle of the die. The device is unique in its class as it combines a very high current capability with a low On-resistance, making it suitable for a wide range of applications.

The device features an insulated-gate structure, where the gate is electrically isolated from the drain and source. The gate voltage is applied between the source and gate electrodes to control the conductivity of the channel. When the gate voltage is high enough, the channel conductivity is increased to make the device internal resistance between the drain and source low. This is the so-called On-state.

The device also has a high threshold voltage, which makes it suitable for higher voltage applications. It has an impressive dynamic performance and a low output capacitance, which makes it suitable for high-frequency switching applications. In addition, it has a temperature stability and offers a load current capability.

The IXFV18N90PS application field includes power supply conditions, DC/DC converters, AC/DC converters, switched mode power supplies, IGBT drivers, dynamic braking, and motor drivers. The working principle of this device is similar to any other MOSFET, but since its switching frequency is higher than that of a regular MOSFET, it can achieve a lower On-resistance and higher speed.

This device works by controlling the flow of current through an insulated gate. When the gate voltage is high, the device enters its On-State, allowing current to flow from the drain to the source electrodes. As the current flows through the device, a voltage drop is created between the source and drain which results in a lower resistance. As the gate voltage is further increased, the resistance continues to decrease until it reaches the minimum value.

Since this device has a high breakdown voltage, it is suitable for high current applications. In addition, this device has low gate charge, helping keep the power dissipation low, which is a great advantage when used in power supplies. The IXFV18N90PS can also operate at temperature up to 150 degrees Celsius.

In conclusion, the IXFV18N90PS is a single, high-voltage transistor with a high current capability and a low On-resistance. It is an advanced power semiconductor device made with planar technology and is suitable for a wide range of applications including power supply conditions, DC/DC converters, AC/DC converters, switched mode power supplies, IGBT drivers, dynamic braking, and motor drivers. This device works on the principle of controlling the flow of current through an insulated gate to enter its On-State, allowing current to flow from the drain to the source electrodes.

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