IXFV18N90P Allicdata Electronics
Allicdata Part #:

IXFV18N90P-ND

Manufacturer Part#:

IXFV18N90P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 900V 18A PLUS220
More Detail: N-Channel 900V 18A (Tc) 540W (Tc) Through Hole PLU...
DataSheet: IXFV18N90P datasheetIXFV18N90P Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Package / Case: TO-220-3, Short Tab
Supplier Device Package: PLUS220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 540W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5230pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
Series: HiPerFET™, PolarP2™
Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IXFV18N90P is a high voltage field-effect transistor (FET) featuring the highest blocking voltage and fast switching capabilities. IXFV18N90P is classified as a single source FET and can be used for both high voltage and high current applications. It is mainly used in DC-DC conversion applications as well as in switching power supplies, motor control and solar inverters.

The IXFV18N90P transistor operates with a maximum drain-source voltage of 1800V and a minimum drain-source voltage of 50V. It has an RDS (on) of 4.3mohm and a minimum drain-source on-state current of 8A. It has a typical gate threshold voltage of 3.0V and a maximum gate-source voltage of 20V.

The device offers total gate charge of 33nC and total gate charge of 36nC. It has a fast switching time of 9 nanoseconds and features extremely low on-resistance. With an operating temperature range of -55 to 150 degrees Celsius, the IXFV18N90P can be used in highly efficient switching power supply applications. The low thermal resistance of 5.6 degrees Celsius per eW ensures fast and stable operation even in the most demanding applications.

The IXFV18N90P transistors are used in applications requiring both high current and high voltage switching. They are ideal for applications involving load switching such as DC-DC converters, motor control and solar inverters. The device is designed to offer excellent switching performance at low gate voltages, making it suitable for applications requiring low power consumption. It is also capable of high speed switching, making it perfect for applications requiring a high switching speed.

The device has the capability to deliver a maximum continuous drain current of 180A. It has a low on-resistance of 4mohm and can handle a maximum power dissipation of 800W. It features excellent thermal performance and is capable of operating with a maximum junction temperature of 150 degrees Celsius. The IXFV18N90P is Halogen-free and RoHS compliant.

The IXFV18N90P transistors have many advantages, such as low on-resistance, fast switching speeds, low gate charge and low gate voltage, making them suitable for a variety of high voltage and high current applications. They are also highly reliable and have a long operational life.

The specific data is subject to PDF, and the above content is for reference

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