
Allicdata Part #: | IXFV18N90P-ND |
Manufacturer Part#: |
IXFV18N90P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 900V 18A PLUS220 |
More Detail: | N-Channel 900V 18A (Tc) 540W (Tc) Through Hole PLU... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 6.5V @ 1mA |
Package / Case: | TO-220-3, Short Tab |
Supplier Device Package: | PLUS220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 540W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5230pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 97nC @ 10V |
Series: | HiPerFET™, PolarP2™ |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IXFV18N90P is a high voltage field-effect transistor (FET) featuring the highest blocking voltage and fast switching capabilities. IXFV18N90P is classified as a single source FET and can be used for both high voltage and high current applications. It is mainly used in DC-DC conversion applications as well as in switching power supplies, motor control and solar inverters.
The IXFV18N90P transistor operates with a maximum drain-source voltage of 1800V and a minimum drain-source voltage of 50V. It has an RDS (on) of 4.3mohm and a minimum drain-source on-state current of 8A. It has a typical gate threshold voltage of 3.0V and a maximum gate-source voltage of 20V.
The device offers total gate charge of 33nC and total gate charge of 36nC. It has a fast switching time of 9 nanoseconds and features extremely low on-resistance. With an operating temperature range of -55 to 150 degrees Celsius, the IXFV18N90P can be used in highly efficient switching power supply applications. The low thermal resistance of 5.6 degrees Celsius per eW ensures fast and stable operation even in the most demanding applications.
The IXFV18N90P transistors are used in applications requiring both high current and high voltage switching. They are ideal for applications involving load switching such as DC-DC converters, motor control and solar inverters. The device is designed to offer excellent switching performance at low gate voltages, making it suitable for applications requiring low power consumption. It is also capable of high speed switching, making it perfect for applications requiring a high switching speed.
The device has the capability to deliver a maximum continuous drain current of 180A. It has a low on-resistance of 4mohm and can handle a maximum power dissipation of 800W. It features excellent thermal performance and is capable of operating with a maximum junction temperature of 150 degrees Celsius. The IXFV18N90P is Halogen-free and RoHS compliant.
The IXFV18N90P transistors have many advantages, such as low on-resistance, fast switching speeds, low gate charge and low gate voltage, making them suitable for a variety of high voltage and high current applications. They are also highly reliable and have a long operational life.
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IXFV14N80PS | IXYS | 0.0 $ | 1000 | MOSFET N-CH 800V 14A PLUS... |
IXFV20N80P | IXYS | 5.02 $ | 1000 | MOSFET N-CH 800V 20A PLUS... |
IXFV30N60PS | IXYS | 0.0 $ | 1000 | MOSFET N-CH 600V 30A PLUS... |
IXFV12N90PS | IXYS | 0.0 $ | 1000 | MOSFET N-CH 900V 12A PLUS... |
IXFV96N15PS | IXYS | 0.0 $ | 1000 | MOSFET N-CH 150V 96A PLUS... |
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IXFV12N80PS | IXYS | 0.0 $ | 1000 | MOSFET N-CH 800V 12A PLUS... |
IXFV12N90P | IXYS | 0.0 $ | 1000 | MOSFET N-CH 900V 12A PLUS... |
IXFV26N50PS | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 26A PLUS... |
IXFV18N60P | IXYS | 0.0 $ | 1000 | MOSFET N-CH 600V 18A PLUS... |
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IXFV26N50P | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 26A PLUS... |
IXFV12N120PS | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1200V 12A PLU... |
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