Allicdata Part #: | IXFV16N80PS-ND |
Manufacturer Part#: |
IXFV16N80PS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 800V 16A PLUS220-S |
More Detail: | N-Channel 800V 16A (Tc) 460W (Tc) Surface Mount PL... |
DataSheet: | IXFV16N80PS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 4mA |
Package / Case: | PLUS-220SMD |
Supplier Device Package: | PLUS-220SMD |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 460W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 71nC @ 10V |
Series: | HiPerFET™, PolarHT™ |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IXFV16N80PS is a N-Channel MOSFET, which is specifically designed for high current and high speed applications, such as switching applications. This type of MOSFET has a maximum current rating of 16 A and a drain-source Voltage of 800 V. It also has a fast switching performance and a low on-state resistance of 0.51 Ω maximum.
In general, MOSFETs are commonly used in electronics circuits with their ability to control current flow without relying on a mechanical switch. IXFV16N80PS is a type of MOSFET that is suitable for high current switching applications. It can be used in such applications as motor control, low voltage circuits, and general-purpose switching.
The working principle of this MOSFET is quite simple. It\'s a three layer structure that consists of source, drain, and gate terminals. The gate terminal controls a \'channel\' between the source and drain. When the voltage is applied to the gate terminal, a current will be induced in the channel, and this will \'open\' or conduct the channel between the source and drain. This allows current to flow from the source to the drain. By changing the voltage applied to the gate terminal, the current flowing through the channel can be controlled.
In addition to the working principle, there are also different parameters that affect the performance of the IXFV16N80PS. These parameters include the gate-source voltage (VGS), the drain-source voltage (VDS), the gate-source capacitance (CGS), and the drain-source capacitance (CDS). When selecting an IXFV16N80PS for a specific application, these parameters must be considered in order to achieve optimal performance.
The IXFV16N80PS is an example of a single N-Channel MOSFET that can be used in high-current switching applications. It has a low on-state resistance, fast switching performance, and a maximum current rating of 16 A. With its ability to control current flow without relying on a mechanical switch, the IXFV16N80PS is an ideal choice for motor control, low voltage circuits, and general purpose switching applications.
The specific data is subject to PDF, and the above content is for reference
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