IXFV15N100P

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IXFV15N100P is a high voltage, normally off FET (Field Effect Transistor). It is an advanced component that uses Insulated Gate Bipolar Transistor (IGBT) technology to provide a component that is highly efficient and reliable. It is made up of three terminals, such as source, drain, and gate, that regulates the flow of electrical current from the source to the drain. It is designed in a Planar Process technology, making it suitable for high power, low voltage applications. It has a very wide range of gate charge values, which are managed by gate overdrive.

The IXFV15N100P FET has a high blocking voltage rating of 15V, a maximum drain source voltage of 100V and a continuous drain current of 68A. It also has a very low on-state resistance of 5mΩ that enables it to achieve extremely high power making it ideal for extreme applications. This component features a fast switching speed of 150ns and an on-state switching speed of 10us, making it suitable for power switching applications. It also offers excellent reliability in both static and dynamic conditions.

The IXFV15N100P provides superior power efficiency and superior performance because of its efficient planar process technology. It is also capable of handling high frequency switching while providing excellent reliability and low power losses. Furthermore, it is ideal for applications which require high-current or high-power handling. This component is also designed with a Short Crossover design, making it compatible with a variety of capacitors, even those that cannot typically handle high power or current levels.

The operating principle of this component is to produce an electric field effect in which an electric field is developed between the source electrode and the drain electrode. This electric field can be controlled by the gate terminal. As the gate voltage is increased, the electric field intensifies and an electric current is created, which is then conducted from the source to the drain. As the gate voltage is decreased, the electric field intensity decreases and the electric current stops. This working principle makes the IXFV15N100P ideal for applications that require high controllability and efficiency.

The IXFV15N100P is mainly used in high power applications that require reliable switching, high power to weight ratio, and wide temperature range. It is commonly used in audio, automotive, and high power lighting systems and for radio frequency (RF) switching. It is also used in high-performance TH- and PV-Controlled Variable Speed Drives (VSDs) as well as in high-frequency switching applications. Furthermore, it can also be utilized in power conversion systems, high voltage motor drives, industrial automation, telecommunications, medical equipment, and military equipment.

With its high voltage capability, fast switching speed, and low on-state resistance, the IXFV15N100P is a high efficiency and reliable component that can be utilized in a wide range of applications. It is also highly flexible and can be used with a variety of capacitors, even those that cannot typically handle high power or current levels. This component is also capable of providing excellent reliability, even in static and dynamic conditions. Therefore, IXFV15N100P is ideal for applications that require high power, high frequency switching, or a high level of controllability, making it a popular choice for many applications.

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