Allicdata Part #: | IXFV26N60PS-ND |
Manufacturer Part#: |
IXFV26N60PS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 26A PLUS220-SMD |
More Detail: | N-Channel 600V 26A (Tc) 460W (Tc) Surface Mount PL... |
DataSheet: | IXFV26N60PS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 4mA |
Package / Case: | PLUS-220SMD |
Supplier Device Package: | PLUS-220SMD |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 460W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4150pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
Series: | PolarHV™ |
Rds On (Max) @ Id, Vgs: | 270 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 26A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXFV26N60PS transistor belongs to the family of fast, insulated gate bipolar transistors (IGBTs). These transistors are used in high power applications, enabling high switching speed, high current handling capability and low on-state resistance.
The IXFV26N60PS application field mainly covers a range of applications such as motor drives, welding, lighting and other high power applications. The high current carrying capacity of these devices make them an ideal choice for applications that require high power.
The working principle of the IXFV26N60PS is based on the principle of insulated gate bi-directional switching. It is a type of transistor that has two state: an on-state and an off-state. When the transistor is in the on-state, the current flows through the channel and the voltage drop is low. When the transistor is in the off state, the current is blocked and the voltage drop is high. The high voltage drop reduces the switching losses and improves the efficiency of the device.
The IXFV26N60PS offers enhanced performance with increased on-state current and higher switching frequency, making it suitable for a wide range of applications. The structure of the device also improves its performance. It is constructed using an IGBT chip that has two N-type semiconductor layers, an anode and a cathode, each with a bus bar. This structure improves the thermal characteristics of the device and provides low forward voltage drop. The device also features a low gate charge, allowing for fast switching speeds.
The IXFV26N60PS is a highly reliable device with a long life expectancy. It is capable of handling high switching frequencies and can be used in a variety of applications. The low gate charge and improved thermal characteristics make the device an ideal choice for applications that require a wide range of performance.
The specific data is subject to PDF, and the above content is for reference
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