IXFV26N60PS Allicdata Electronics
Allicdata Part #:

IXFV26N60PS-ND

Manufacturer Part#:

IXFV26N60PS

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 26A PLUS220-SMD
More Detail: N-Channel 600V 26A (Tc) 460W (Tc) Surface Mount PL...
DataSheet: IXFV26N60PS datasheetIXFV26N60PS Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 4mA
Package / Case: PLUS-220SMD
Supplier Device Package: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 460W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Series: PolarHV™
Rds On (Max) @ Id, Vgs: 270 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IXFV26N60PS transistor belongs to the family of fast, insulated gate bipolar transistors (IGBTs). These transistors are used in high power applications, enabling high switching speed, high current handling capability and low on-state resistance.

The IXFV26N60PS application field mainly covers a range of applications such as motor drives, welding, lighting and other high power applications. The high current carrying capacity of these devices make them an ideal choice for applications that require high power.

The working principle of the IXFV26N60PS is based on the principle of insulated gate bi-directional switching. It is a type of transistor that has two state: an on-state and an off-state. When the transistor is in the on-state, the current flows through the channel and the voltage drop is low. When the transistor is in the off state, the current is blocked and the voltage drop is high. The high voltage drop reduces the switching losses and improves the efficiency of the device.

The IXFV26N60PS offers enhanced performance with increased on-state current and higher switching frequency, making it suitable for a wide range of applications. The structure of the device also improves its performance. It is constructed using an IGBT chip that has two N-type semiconductor layers, an anode and a cathode, each with a bus bar. This structure improves the thermal characteristics of the device and provides low forward voltage drop. The device also features a low gate charge, allowing for fast switching speeds.

The IXFV26N60PS is a highly reliable device with a long life expectancy. It is capable of handling high switching frequencies and can be used in a variety of applications. The low gate charge and improved thermal characteristics make the device an ideal choice for applications that require a wide range of performance.

The specific data is subject to PDF, and the above content is for reference

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