Allicdata Part #: | IXFV12N80PS-ND |
Manufacturer Part#: |
IXFV12N80PS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 800V 12A PLUS220-S |
More Detail: | N-Channel 800V 12A (Tc) 360W (Tc) Surface Mount PL... |
DataSheet: | IXFV12N80PS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5.5V @ 2.5mA |
Package / Case: | PLUS-220SMD |
Supplier Device Package: | PLUS-220SMD |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2800pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 51nC @ 10V |
Series: | HiPerFET™, PolarHT™ |
Rds On (Max) @ Id, Vgs: | 850 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXFV12N80PS transistor is an enhancement-mode, Field-Effect Transistor (FET). It is a two-terminal, unipolar, low-voltage switch which is able to provide an efficient solution for power applications. The IXFV12N80PS is operated at surface mounting technology (SMT) with a voltage rating of 800V and a current rating of 12A.
The IXFV12N80PS transistor consists of four main parts, the gate, drain, source, and the body. The gate is the control terminal which is used to switch the transistor from an off to an on state. The drain and source terminals provide current flow from the drain to the source. The body terminal collects the electrons that leave the source terminal, thus controlling the current flow through the transistor. In the off state, no current flows through the transistor since the gate is not charged, and the body is electrically connected to the source. In the on state, current flows through the transistor since the gate is forward biased and the body is electrically isolated from the source.
In terms of its working principle, IXFV12N80PS is a depletion-mode FET, meaning that it has to be adequately biased to turn it on. When the gate is left open, the transistor will be off since it has a low-level body voltage. To turn the transistor on, the gate needs to be connected to a positive voltage, which will produce a voltage differential between the drain and source. This will electromigrate a large number of electrons from the source to the drain, creating an inversion layer of current carriers that is able to conduct dc from the drain to the source.
The IXFV12N80PS transistor offers a wide range of applications, such as in power management, motor drives, and high-power switching. It can be used in power switching circuits for controlling the speed and power of a dc motor by using a Pulse Width Modulation (PWM). Additionally, it can be used in battery powered gadgets, such as laptops and tablets, to help provide an efficient supply of current. Furthermore, it can be used in high-end audio amplifier circuits to improve sound volume and clarity.
The IXFV12N80PS transistor is a highly reliable, efficient, and cost-effective switch suitable for various applications. It provides low on-resistance, fast switching, and excels at controlling high-power motors, making it an attractive choice for a wide range of applications. Designed with the latest surface-mount technologies, this device is ideal for energy efficient applications and can help you deliver superior performance while reducing your overall cost.
The specific data is subject to PDF, and the above content is for reference
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