IXFV30N60PS

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXFV30N60PS is a single N-channel MOSFET that is designed for applications including high current switching, DC-DC converters, motor control, and other power management systems. It is a single-drain, single-source device that features high PIXF, which is the maximum of 33V, and an RDSon that is the lowest of 60mohm at 10V. It also has a peak current of 540A and a Dpak-7 case that enables it to handle higher power and higher currents, making it suitable for a variety of industrial and consumer applications.

The IXFV30N60PS comprises two metal-oxide silicon (MOS) gate field effect transistors (FET). MOS transistors are components made up of a gate, source, and drain, and they act as a switch when an adequate voltage is applied to the gate. In terms of functionality, the gate control the flow of electrons between the source and drain and is pivotal in the modulation of current. A field effect transistor is a type of transistor that is made of a single gate and is capable of switching much faster than conventional bipolar transistors.

The IXFV30N60PS operates by the application of a gate voltage to switch the device from cut-off to saturation, creating a channel through which current can flow. This channel is accessed via the source and drain connections, and the resistance between them, RDSon, is determined by the applied gate voltage. RDSon increases with increasing gate voltage, and when the saturation is reached, the current flow is limited by RDSon. The peak drain current of the IXFV30N60PS is determined by the peak PIXF, which is set to 33V by the manufacturer.

This means the device is capable of supplying current up to the PIXF and the current flow is effectively regulated by the gate voltage. The overall design of the IXFV30N60PS ensures that it is a well-suited option for a variety of applications. The ability of this device to switch between cut-off and saturation in a very fast manner makes it suitable for high-performance applications such as DC-DC converters, motor control, and power management systems. In addition, the RDSon of the device is a low 60mohm at 10V, which minimizes the current consumption of the device, providing efficiency for its applications.

In conclusion, IXFV30N60PS is a single-drain, single-source MOSFET suitable for a wide range of applications, including high current switching, DC-DC converters, motor control, and power management systems. Advanced features of the device such as its PIXF of 33V and low RDSon at 10V make it suitable for these high-performance applications. With its high peak current of 540A and a Dpak-7 case, the device has the capacity to handle higher power and higher currents, making it reliable and effective for the applications it is designed for.

The specific data is subject to PDF, and the above content is for reference