| Allicdata Part #: | IXTH02N250-ND |
| Manufacturer Part#: |
IXTH02N250 |
| Price: | $ 9.82 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 2500V 0.2A TO247 |
| More Detail: | N-Channel 2500V 200mA (Tc) 83W (Tc) Through Hole T... |
| DataSheet: |  IXTH02N250 Datasheet/PDF |
| Quantity: | 136 |
| 1 +: | $ 8.92710 |
| 30 +: | $ 7.50582 |
| 120 +: | $ 6.89724 |
| 510 +: | $ 5.88294 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 (IXTH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 83W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 116pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 7.4nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 450 Ohm @ 50mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 200mA (Tc) |
| Drain to Source Voltage (Vdss): | 2500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTH02N250 is a type of high-speed Vertical MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a single transistor device with low On-resistance, fast switching speed, and low gate drive power. This makes it ideal for applications such as switching power converters, motor control, and high-speed switching.
IXTH02N250 Application Field
The IXTH02N250 is specifically applicable to high-frequency power supplies, high-speed motor drives, low-frequency power supplies, and LEDs. It is capable of extremely fast switching speeds and low drive power. This makes it especially efficient in these applications. The IXTH02N250 has an exceptionally low on-resistance, making it an excellent choice for applications such as high-frequency power supplies and power converters that need to supply high amounts of power.
IXTH02N250 Working Principle
The IXTH02N250 is a vertical MOSFET which operates by using the channel conductivity in the P-type material to switch on and off current flow. It consists of an insulation layer, a second gate from the source, and an N-type channel. When a positive voltage is applied to the gate, the electric field causes a depletion of the channel to reduce its resistance. This allows current to flow through the transistor and power a load.
When the positive gate voltage is removed, the electric field no longer affects the channel, reducing its resistance. This deactivates the transistor and stops the current flow. By controlling the gate voltage, the current flow through the transistor can be controlled.
Conclusion
The IXTH02N250 is a high-speed Vertical MOSFET with superior power efficiency and fast switching speeds. It is ideal for applications such as switching power converters, motor control, and high-speed switching. It has an extremely low on-resistance, making it perfect for applications that require high current outputs or high-frequency power supplies. Thanks to its reliable, efficient performance, the IXTH02N250 is a popular choice in many industrial and consumer electronics applications.
The specific data is subject to PDF, and the above content is for reference
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