IXTH12N120

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IXTH12N120 Application Field and Working Principle

IXTH12N120 is a specific type of field-effect transistor (FET) used in a variety of applications. It is a single-gate high voltage N-channel enhancement-mode transistor featuring superior high voltage and low on-state resistance. This device is well suited for switch mode power supplies, motor control and high voltage rectifiers, among other applications. This article will focus on the application fields, working principles and specs of this particular device.

Application Fields

IXTH12N120 is primarily used in switch-mode power supplies (SMPS). The device has superior high voltage characteristics and low on-state resistance, which make it an ideal choice for this application. It is also very suitable for high voltage rectifiers, motor control, and other applications that require an isolation from the gate drive. The device is also used in AC/DC and DC-to-DC converters.

Additionally, the IXTH12N120 is also used in a variety of industrial applications such as renewable energy, industrial sensors, industrial safety systems, and home automation.

Working Principle

IXTH12N120 is a high voltage N-channel enhancement-mode FET. The FET is an electronic device made up of an N-channel semiconductor surrounded by a gate and source. When the gate is biased with a positive voltage, electrons flow through the N-channel and allow current to pass through one terminal to the other. This is known as the on-state of the device.

When the gate voltage is set to zero, electrons are not allowed to flow through the N-channel and the current stops. This is known as the off-state of the device. The device can be switched between the on-state and off-state to control the flow of electricity.

Specs

The device is available in a variety of packages and configurations, ranging from TO-220, D2Pak and D3Pak packages. It has a high continuous drain current of 19A and a maximum drain source voltage of 1200V. The device has an on-state resistance of 1.5mΩ and a max avalanche energy of 37mJ. The device is rated for a junction temperature of 175°C and an operating temperature range of -55°C to 175°C.

The device also features reverse body diode protection, which allows it to withstand high reverse drain-source voltages. Additionally, the device is designed for low gate drive power requirements, making it suitable for applications with limited gate drive currents.

In conclusion, the IXTH12N120 is a single-gate high voltage N-channel FET that is well suited for a variety of applications, from switch mode power supplies to motor control. With its high maximum drain-source voltage and low on-state resistance, it is an ideal choice for these applications. The device also offers reverse body diode protection and low gate drive power requirements, making it a reliable and efficient solution.

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