| Allicdata Part #: | IXTH5N100A-ND |
| Manufacturer Part#: |
IXTH5N100A |
| Price: | $ 6.43 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 1000V 5A TO247AD |
| More Detail: | N-Channel 1000V 5A (Tc) 180W (Tc) Through Hole TO-... |
| DataSheet: | IXTH5N100A Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 5.79243 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 (IXTH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 180W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2600pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 2 Ohm @ 2.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
| Drain to Source Voltage (Vdss): | 1000V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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.IXTH5N100A is an advanced field effect transistor (FET) from Infineon Technologies. It’s a N-channel MOSFET that comes in an easy to use TO-218 package. The IXTH5N100A makes it easy to work with FETs in a wide range of applications and is versatile enough to be used with almost any microcontroller or switching supply.
IXTH5N100A application field and working principle
The IXTH5N100A is suitable for many applications, ranging from industrial controllers, high-speed switching, and power conversion circuits to home appliance control systems. It is suitable for a variety of power management requirements, such as switching voltage regulators, battery management systems, load switching, and motor control. Additionally, the IXTH5N100A can be used in all sorts of automated control systems for portable electronic devices.
The IXTH5N100A uses N-channel MOSFET technology. With this type of FET, the current conduction is controlled by a gate to source voltage (VGS). When the voltage applied to the gate is sufficient, current flows from drain to source. This type of FET does not require a bias voltage, as the FET is always on when a voltage is applied to the gate. The IXTH5N100A features an avalanche energy-rated breakdown voltage of -17V and has a maximum operating temperature of 150°C.
The N-channel MOSFETs are designed to provide an excellent balance of performance and cost. Unlike other FETs, N-channel MOSFETs are less likely to suffer from switching losses and are especially useful in applications that require high speed switching. They are also more reliable than other FETs due to their low gate capacitance and ability to handle higher switching frequencies. Furthermore, they offer better performance in terms of power loss and on-state resistance.
The IXTH5N100A is also designed to provide current limiting and over-current protection. This makes it a great choice for applications such as motor control and battery management systems. With a current limiting feature, it limits an increase in current during short circuit conditions. This helps to reduce the possibility of damage to the device and circuits connected to it. Additionally, the IXTH5N100A can be used in reverse blocking mode, where it will prevent current from going in the wrong direction.
The IXTH5N100A is suitable for a wide variety of applications and has a very attractive price point. It has excellent performance and is designed to provide reliable protection. It has good temperature capabilities and can withstand high operating temperatures. Furthermore, its surge capability helps to make sure that it can be used in applications where high-speed switching is required.
The specific data is subject to PDF, and the above content is for reference
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IXTH5N100A Datasheet/PDF