IXTH30N25 Allicdata Electronics
Allicdata Part #:

IXTH30N25-ND

Manufacturer Part#:

IXTH30N25

Price: $ 7.92
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 250V 30A TO-247
More Detail: N-Channel 250V 30A (Tc) 200W (Tc) Through Hole TO-...
DataSheet: IXTH30N25 datasheetIXTH30N25 Datasheet/PDF
Quantity: 1000
30 +: $ 7.13055
Stock 1000Can Ship Immediately
$ 7.92
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 75 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTH30N25 is a special type of transistor called an insulated gate-field effect transistor, more commonly known as a MOSFET. It is classified as a single MOSFET, meaning it has only one type of switchable device: the insulated gate. This transistor is designed with the ability to control and regulate the flow of electric current through its gate by opening or closing a small electric switch.

The IXTH30N25 is designed to operate at high voltages and current levels. It is rated for up to 25-amp operation at 30 volts, and can be used for a variety of applications, such as switching and controlling high-powered electrical devices. Furthermore, it is ideal for power distribution, since it can handle high current levels without incurring large losses due to resistance.

The IXTH30N25 uses an insulated-gate field-effect transistor (IGFET) as its main switching element. This type of device is made up of a metal-oxide semiconductor (MOS) layer, or gate, which is insulated from the rest of the device by a thin layer of oxide. A voltage applied to the gate can cause a change in the current through the channel, which can be used to switch the transistor on and off.

The IXTH30N25 has a few advantages when compared to traditional transistors. For one, it is capable of turning on and off faster than regular transistors. This faster switching speed allows the IXTH30N25 to be used for high-speed digital applications, such as data communication systems. Furthermore, since the gate voltage is completely isolated from the drain, it provides improved electrical protection compared to regular transistors.

Another advantage of the IXTH30N25 is that it is less sensitive to changes in temperature and humdity. This makes it ideal for use in outdoor environments where the ambient temperature is likely to fluctuate. Finally, since the IXTH30N25 does not produce large amounts of heat when operating at full power, it makes it an ideal choice for use in power supplies where heat control is important.

In summary, the IXTH30N25 is a single MOSFET designed for high-voltage and current levels. Its insulated gate field-effect transistor allows it to be used for fast switching operations, it is less sensitive to environmental changes, and it runs with minimal heat output when at full power. These traits make it well-suited to a variety of applications, such as power distribution and data communication systems.

The IXTH30N25 is undoubtedly a valuable addition to the family of transistors. It provides the ability to control and regulate high-power electrical devices and is ideal for use in harsh outdoor environments. As a result, it is widely used and relied on by many industries and professionals worldwide.

The specific data is subject to PDF, and the above content is for reference

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