IXTH36P10

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The IXTH36P10 is a trench-gated Power MOSFET (metal–oxide–semiconductor field-effect transistor). It is a feature-rich power MOSFET that is optimized to deliver an extremely low on-resistance with low gate charge and a high-frequency switching performance. It is ideal for applications requiring power saving and efficiency, such as amplifier outputs and motor control applications.

The IXTH36P10 is a N-channel enhancement type with a vertical D-MOS structure. It is composed of two N-Channel MOSFETs having a common gate. The device is composed of a vertical D-MOS structure composed of multiple wells, which separate the source and drain. This structure provides a wide range of current carrying capability and higher power conductivity.

The IXTH36P10 has a low drain-source on-resistance performance and low gate charge. This enables it to provide high-efficiency switching performance at higher frequencies. Additionally, its low on-resistance and low gate charge can help reduce power consumption and improve system efficiency. The enhanced features of the IXTH36P10 makes it well suited for a wide range of applications, such as thick-cell phone architecture and application circuits, in which fast switching and higher efficiency are of paramount importance.

The IXTH36P10 operates as a switch. When a voltage is applied to the gate, current will flow through the device. The source voltage of the device is limited by the body diode that is present between the source and drain. The device can be turned off by reducing the gate voltage, thereby disconnecting the drain from the source. This structure helps to reduce power loss and improve system efficiency.

To improve the switching performance, the IXTH36P10 has a patented trench MOS gate structure. This helps to reduce the gate capacitance and gate resistance, providing improved switching speed and better power efficiency. Also, the drain-source voltage is specifically designed to increase the device current handling capability. Furthermore, the incorporation of Active Source Biasing (ASB) technology helps reduce switching losses and improve the efficiency of the IXTH36P10 when used in high-speed applications.

In summary, the IXTH36P10 is an extremely low on-resistance plus low gate charge, high-frequency switching performance Power MOSFET device. It is suitable for applications requiring power saving and efficiency, such as amplifier outputs and motor control applications. Moreover, its low on-resistance and low gate charge are instrumental in reducing power consumption and improving system efficiency. Lastly, its high-performance switching capabilities are further improved by the patented trench MOS gate structure, the ASB technology and the incorporated drain-source voltage.

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