IXTH20N60 Discrete Semiconductor Products

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The IXTH20N60 is an IGBT module by IXYS Corporation engineered with advanced features that provide enhanced performance and make it suitable for AC and DC applications. This device is created with a variety of features which enable it to deliver outstanding power ratings and high reliability. As such, it has become a popular choice for industrial, automotive, and commercial applications in the power electronics field.

The IXTH20N60 is a standard type of IGBT (insulated gate bipolar transistor) which features an inbuilt N-channel MOSFET. As a type of FET (field-effect transistor), the behavior of the MOSFET relies on voltage control. This IGBT is popular due to its capability of switching high currents at high frequencies with low losses compared to conventional bipolar transistors.

As for the application field, the IXTH20N60 IGBT module has several potential uses. Industrial applications serve as one potential use for this device, as it is well-suited for servomotor drives, medium-voltage drive systems, sine wave and PFC rectifier inverters, active power factor correction (APFC) systems, and ambient temperature sensors. Automotive-related uses for this product include inverter systems for hybrid vehicles, automotive traction drives, battery chargers, and LED drivers. Commercial applications that benefit from the device include solar-energy inverters, uninterruptible power supplies (UPS) systems, vibration motor drives, electronic lighting ballasts, HVAC systems, and more.

The operation and working principle of the IXTH20N60 relies on the basic functioning of an N-channel MOSFET, in which a voltage applied to the gate terminal (G) controls the current allowed to pass through the drain and source of the power device. In this way, an input signal of a certain voltage or current level can control the output voltage or current level.

When the gate terminal of the IXTH20N60 is provided with a negative voltage compared to its source terminal, the device is in the on-state with current conduction from drain to source. A positive voltage to the gate turns the device off, thus preventing the drain and source from conducting current. Logic level N-channel MOSFETs such as the IXTH20N60 feature logic input levels, allowing them to be controlled by logic signals from a microcontroller. The breakdown voltage of this device is 600V while its collector current is 20A.

To sum up, the IXTH20N60 is an IGBT module produced by IXYS Corporation which features an integrated N-channel MOSFET that can be used for a variety of purposes. This device is its efficiency in switching high currents and high frequencies with low losses make it suitable for AC and DC applications across many industrial, automotive, and commercial settings. Its operation and working principle rely on the basic functioning of an N-channel MOSFET, in which a voltage applied to the gate terminal controls the current allowed to pass through the drain and source. Overall, the IXTH20N60 IGBT module is a reliable and powerful power device.

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