| Allicdata Part #: | IXTH130N20T-ND |
| Manufacturer Part#: |
IXTH130N20T |
| Price: | $ 4.16 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 200V 130A TO-247 |
| More Detail: | N-Channel 200V 130A (Tc) 830W (Tc) Through Hole TO... |
| DataSheet: |  IXTH130N20T Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 3.74283 |
| Vgs(th) (Max) @ Id: | 5V @ 1mA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 (IXTH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 830W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 8800pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
| Series: | TrenchHV™ |
| Rds On (Max) @ Id, Vgs: | 16 mOhm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 130A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IXTH130N20T is a type of field-effect transistor (FET), which belongs to a group of MOSFETs that includes a single-channel device. The IXTH130N20T is a depletion-mode HEXFET Power MOSFET, capable of producing a high power efficiency with a relatively low on-state resistance.
These transistors feature a wide range of useful applications. For example, they can be used in controlled current sources, operating control circuits, DC-DC converters, and active loads. In addition, they can also be used for driving and controlling relays, solenoids, lamps, motors and other load devices. The IXTH130N20T can be used in many switching power supplies, and AC-DC and DC-DC converters due to its low on resistances and high breakdown voltages.
The general working principle of the IXTH130N20T is essentially the same as that of a field-effect transistor. This MOSFET has an insulated gate, which can be operated with a voltage or current between the gate and the source. A positive voltage applied to the gate will induce a channel between the drain and the source, while a negative voltage applied to the gate will deplete the channel and turn the transistor off. This is why the IXTH130N20T belongs to the depletion-mode MOSFET family.
The IXTH130N20T is easy to operate and very reliable with high current transfer ratio (CTR). Its on-state resistance is relatively low, while the transistor can be guaranteed to operate within the specified parameters up to 175°C. In addition, the device is RoHS compliant and features high-temperature soldering capability.
In summary, IXTH130N20T is a depletion-mode HEXFET Power MOSFET with various abilities. The device has a wide range of applications such as current sources, control circuits and AC-DC and DC-DC converters. The MOSFET is reliable, easy to operate and has a low on-state resistance. All these features make it an ideal choice for various power switching applications.
The specific data is subject to PDF, and the above content is for reference
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