Allicdata Part #: | IXTH160N15T-ND |
Manufacturer Part#: |
IXTH160N15T |
Price: | $ 5.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 150V 160A TO-247 |
More Detail: | N-Channel 150V 160A (Tc) 830W (Tc) Through Hole TO... |
DataSheet: | IXTH160N15T Datasheet/PDF |
Quantity: | 1000 |
90 +: | $ 4.67845 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 (IXTH) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 830W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8800pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 160nC @ 10V |
Series: | TrenchHV™ |
Rds On (Max) @ Id, Vgs: | 9.6 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 160A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTH160N15T is a high current single N-channel enhancement mode Field Effect Transistor (FET). It was designed to meet high efficiency power supply design requirements and to operate in higher voltage switching applications done by low voltage, low current controllers. This application field is usually found in offline converters.
When compared to other available FETs in the market, the IXTH160N15T offers low gate charges, low gate resistance and low internal capacitances. Moreover, it also offers improved performance and higher current handling capabilities, making it ideal for high efficiency and power switch designs.
The main characteristics of the IXTH160N15T involve high DC current, high frequency performance and low on-resistance. This device belongs to the HEXFET family, and the HEXFET technology is used extensively in many leading-edge power design projects.
The operating principle of the IXTH106N15T is quite simple. It works as a voltage-controlled switch in which the current flow through a channel is regulated by a voltage applied to the gate of the device.
The exact behaviour depends on the type of device, which can be either enhancement-type or depletion-type. In the case of the IXTH160N15T, it is an enhancement-type FET, meaning that when the gate-to-source voltage is increased, the current flow through the channel increases. On the other hand, when the gate-to-source voltage is decreased, the current flow through the channel decreases and the device is said to be in the "off" state.
In terms of the electrical characteristics, the IXTH160N15T is rated for a continuous drain-source current of 15 A at both Tj=25°C, and Tj=100°C. It also has a maximum drain-gate voltage of ±20 V. It has an on-resistance, RDS(on), of 0.7Ω, a gate charge, Qg, of 13 nC and an input capacitance, Ciss, of 1030 pF.
The device also has a maximum operating temperature, Tj, of 175°C and it is rated for a maximum drain-source voltage of 600 V. It is offered in a TO-252 package, making it suitable for surface mounting.
The IXTH160N15T is widely used in a large variety of applications, such as power supplies, motor control and motion control. Its high current handling capabilities and small package size make it a great choice for these applications.
Overall, the IXTH160N15T is a very efficient and reliable Field Effect Transistor designed for high efficiency power switches and higher voltage applications. It can be used in a variety of applications thanks to its small package size, high current handling capabilities, and low on-resistance.
The specific data is subject to PDF, and the above content is for reference
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