IXTH72N30T

Series:	--
Packaging:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	300V
Current - Continuous Drain (Id) @ 25°C:	72A (Tc)
Rds On (Max) @ Id, Vgs:	--
Vgs(th) (Max) @ Id:	--
FET Feature:	--
Power Dissipation (Max):	--
Operating Temperature:	--
Mounting Type:	Through Hole
Supplier Device Package:	TO-247 (IXTH)
Package / Case:	TO-247-3

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IXTH72N30T Application Field and Working Principle

The IXTH72N30T is a high-performance insulated gate field effect transistor (IGFET) developed by Infineon Technologies. It is designed to deliver increased power density and reliability in a wide range of applications. This document will provide an overview of the IXTH72N30T, including its application field and working principle.The IXTH72N30T belongs to the advanced family of insulated gate field effect transistors (IGFETs) developed by Infineon Technologies. It is a highly reliable device that can be used in a large variety of applications, such as telecommunications, power switching and motor control. The device is an enhancement mode n-channel insulated gate field effect transistor that can be used as a switch to control the flow of current from source to drain.The IXTH72N30T is designed to provide high performance and improved reliability in a wide range of applications. The IXTH72N30T has a low on-resistance and is able to dissipate up to 70W of power. It also features a wide operating temperature range (-55°C to +150°C) and has a low gate-source capacitance, making it suitable for high speed switching applications. The IXTH72N30T has a symmetrical structure with a source and drain terminal on both sides of the device. The source and drain terminals are connected with the gate terminal to create a three-terminal device. The gate terminal is responsible for controlling the source-drain current. When the gate voltage is positive with respect to the source voltage, an electric field is created in the channel that forces electrons to the source and causes the current to flow through the device. This is known as the enhancement mode. All IGFETs, including the IXTH72N30T, are usually operated in enhancement mode. However, some types of IGFETs, such as the depletion mode type, can also be operated in depletion mode by applying a negative gate voltage. The electric field created in the channel in depletion mode attracts the electrons away from the source and reduces the flow of currents.The IXTH72N30T is an ideal device for applications that require high performance, such as power switching and motor control. The device is able to dissipate up to 70W of power and has a very low on-resistance. It also has a wide operating temperature range and is highly reliable, making it suitable for various applications.The IXTH72N30T is also suitable for high speed switching applications as it has a low gate-source capacitance. In addition, the device is voltage and temperature compensated, meaning it has a low variation in its threshold voltage, making it ideal for use in temperature compensated circuits.In conclusion, the IXTH72N30T is an ideal device for applications requiring high performance, high reliability and low power dissipation. It is able to dissipate up to 70W of power, has a wide operating temperature range and is highly reliable. It also has a low gate-source capacitance, making it suitable for high speed switching applications. The device is voltage and temperature compensated, meaning it has a low variation in its threshold voltage, making it ideal for use in temperature compensated circuits.

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