IXTH12N150

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247 (IXTH)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	890W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3720pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	106nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	2 Ohm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	12A (Tc)
Drain to Source Voltage (Vdss):	1500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

<p>The IXTH12N150 is a single JFET from IXYS Integrated Circuits Division, designed for general purpose applications and specified for high voltage, high speed switching operations. This JFET features low ON resistance and low gate threshold voltage, typically below 0.4V. It also features an exceptionally high linearity and low noise figure.</p><p>This IXTH12N150 JFET is typically used in switching circuits and analog applications such as amplifiers, oscillators, clocks and converters. It is commonly used in applications such as amplifier biasing, distortion control, frequency modulation, switching in industrial and security systems, RF signal processing, and frequency control.</p><p>The IXTH12N150 is implemented in a TO-263-5 package and is available in either an SC-70 or SO-5 package. It has an absolute maximum rating of 12A, 12V and an operating temperature of -55 to +150C. Its voltage ratings are 12V for drain-source and 3V for drain-gate.</p><p>The IXTH12N150 is a single JFET, which means that it has only one current-carrying junction (the drain-source), unlike other FETs that have two or more junctions. As such, it has less gate noise, lower gate capacitance, and lower ON resistance than other FETs.</p><p>The IXTH12N150 works on the principle of a JFET, which operates by varying the amount of current flowing across the drain-source junction in response to a varying voltage applied to the gate terminal. This means that the IXTH12N150 is a voltage controlled device, which means that it can be used to control the signal delivered through the drain-source junction.</p><p>The typical gate threshold voltage of the IXTH12N150 is 0.4V, while its typical ON resistance can range from 0.7 to 3 ohms. The IXTH12N150 JFET also features an exceptionally low noise figure, making it suitable for analog applications.</p><p>In summary, the IXTH12N150 is a single JFET from IXYS Integrated Circuits Division, typically used in switching circuits and analog applications such as amplifiers, oscillators, clocks, and converters. It has low ON resistance, low gate threshold voltage, and a high linearity and low noise figure. It is implemented in a TO-263-5 package and is available in either an SC-70 or SO-5 package.</p>

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description