IXTH22N50P

Vgs(th) (Max) @ Id:	5.5V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247 (IXTH)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	350W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2630pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	50nC @ 10V
Series:	PolarHV™
Rds On (Max) @ Id, Vgs:	270 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	22A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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<p>The IXTH22N50P field-effect transistor (FET) is a single drain-source field-effect transistor (MOSFET) with very low on-state power dissipation. The IXTH22N50P is a high-speed device intended for power supply regulation, switching, and amplification. It has a 520V breakdown rating, making it ideal for applications where high voltage is present.</p><p>The IXTH22N50P is a depletion-mode FET. It operates in a similar way to a bipolar junction transistor (BJT) in that a gate voltage can be used to control the drain-source current flow. However, unlike a BJT, the IXTH22N50P is unipolar and the practical current-carrying region can only be either on or off. Thus, the IXTH22N50P\'s switching speed is much faster than that of a BJT.</p><p>The primary application of the IXTH22N50P is power supply regulation. The depletion-mode nature of the device allows it to operate in linear mode and regulate the output voltage to the desired level. Additionally, IXTH22N50P can be used for high-speed switching applications, such as in power supply circuits, power converters, amplifiers, switching circuits, and other applications.</p><p>The working principle of the IXTH22N50P is relatively simple. The gate voltage, Vgs, creates an electric field between the gate and the source. This electric field then depletes the conductivity of the channel existing between the drain and the source. By varying the gate voltage, the current flow between the drain and the source can be controlled. When the gate voltage is low, the current flow is high; when the gate voltage is high, the current flow is low.</p><p>The IXTH22N50P can also be used in amplifying applications. In these applications, an input signal is applied to the gate and the current flow between the drain and the source is proportional to the input signal. The IXTH22N50P is an ideal device for this application due to its low on-state power dissipation and its high switching speed.</p><p>In summary, the IXTH22N50P is a high-speed, depletion-mode MOSFET with low on-state power dissipation. It is used in applications such as power supply regulation, switching, and amplification. Its primary working principle is that the gate voltage controls the current flow between the drain and the source.</p>

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